| Allicdata Part #: | IXTQ120N20P-ND |
| Manufacturer Part#: |
IXTQ120N20P |
| Price: | $ 6.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 120A TO-3P |
| More Detail: | N-Channel 200V 120A (Tc) 714W (Tc) Through Hole TO... |
| DataSheet: |  IXTQ120N20P Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 5.43585 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 714W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6000pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 152nC @ 10V |
| Series: | PolarHT™ |
| Rds On (Max) @ Id, Vgs: | 22 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTQ120N20P is a MOSFET that finds application in many fields. It is part of the IXTQ series of MOSFET transistors that complies with the RoHS directive.
The IXTQ120N20P is a depletion mode vertical channel N-channel MOSFET. It is designed to handle a high drain-source voltage up to 120 volts and a maximum drain current of 20 amps. It has an on-resistance of 240 mΩ at 10 volts, with a low gate-source voltage normally between zero and two volts. This makes it ideal for a wide range of applications, from low voltage and low current to high voltage and high current.
The IXTQ120N20P is commonly used in home improvement projects, motor controls, and other situations that require a reliable, constant flow of electricity. It is also found in power supplies, heating and air-conditioning equipment, solenoid valves, relays and automatic door openers. It is also used in automotive applications and parts like battery chargers and AC controllers.
The working principle of the IXTQ120N20P is the same for any MOSFET device. It operates by creating an electric field between the source and drain electrodes and allowing it to control the current flowing through the device. The gate electrode is used to create and control this electric field, allowing current to flow through the device when the gate voltage is at least above a certain threshold voltage.
The IXTQ120N20P is built using a vertical DMOS structure, which is composed of a polysilicon gate and field oxide layers. This construction allows for a high drain current due to a low on-resistance and a high breakdown voltage. Additionally, the vertical DMOS structure also allows for a low gate-source voltage and excellent switching speed.
The IXTQ120N20P is designed to be a flexible, reliable, and cost effective device. It is suitable for use in a variety of applications requiring low voltage and low current or high voltage and high current with excellent control. With its low on-resistance and high breakdown voltage, it is also ideal for high efficiency power conversion.
The specific data is subject to PDF, and the above content is for reference
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