| Allicdata Part #: | IXTQ240N055T-ND |
| Manufacturer Part#: |
IXTQ240N055T |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 55V 240A TO-3P |
| More Detail: | N-Channel 55V 240A (Tc) 480W (Tc) Through Hole TO-... |
| DataSheet: |  IXTQ240N055T Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 480W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7600pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
| Series: | TrenchMV™ |
| Rds On (Max) @ Id, Vgs: | 3.6 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 240A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IXTQ240N055T is a specialized type of field effect transistor (FET) often used in many advanced electronics applications. It is a relatively new device and has unique properties and advantages compared to other transistors. In this article, we will discuss the application field and working principle of the IXTQ240N055T.
The Application Field of IXTQ240N055T
Due to the excellent static and dynamic characteristics of the IXTQ240N055T, it has become a popular device in many applications. It is used mainly in power conversion and motor driver applications, such as high-frequency switching power supplies and DC-DC converters. It is also used in high-speed switching loads, motor drivers, AC motor drives, and linear voltage regulators. Last but not least, it is also suitable for use in a wide range of energy-saving applications, such as solar energy and wind power systems.
Working Principle of IXTQ240N055T
The IXTQ240N055T is a high-voltage MOSFET (metal-oxide semiconductor field-effect transistor). It has a very low on-resistance, low gate-to-source charge and good thermal characteristics. This makes it an ideal choice for switching applications with high dV/dt and low rise/fall times. The working principle of the IXTQ240N055T can be understood by looking at its structure. It consists of three terminals: the source, the drain and the gate. The drain and source terminals are connected to the semiconductor channel. When a positive voltage is applied to the gate terminal, it creates an electric field that attracts charge carriers (electrons or holes) to the channel and thus turns on the device. The current passing through the channel is proportional to the voltage applied to the gate terminal.
When the voltage on the gate terminal is reduced to zero, the electric field disappears and the channel is blocked, thus turning off the device. This is known as the source-following mechanism. The voltage on the source terminal must always follow the voltage on the gate terminal in order for the device to remain in the off state. In addition to the source-following mechanism, the IXTQ240N055T also features a fast switch-off time which provides excellent reverse avalanche current capability. This makes it an ideal choice for high-speed switching.
Conclusion
The IXTQ240N055T is a high-voltage MOSFET designed for power applications. It has excellent static and dynamic characteristics, making it an ideal choice for a variety of applications. Its fast switch-off time gives it excellent reverse avalanche current capability as well. With these advantages, the IXTQ240N055T is a useful device for many advanced electronics applications.
The specific data is subject to PDF, and the above content is for reference
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