IXTQ26P20P Allicdata Electronics
Allicdata Part #:

IXTQ26P20P-ND

Manufacturer Part#:

IXTQ26P20P

Price: $ 3.68
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 200V 26A TO-3P
More Detail: P-Channel 200V 26A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: IXTQ26P20P datasheetIXTQ26P20P Datasheet/PDF
Quantity: 1000
30 +: $ 3.30918
Stock 1000Can Ship Immediately
$ 3.68
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Series: PolarP™
Rds On (Max) @ Id, Vgs: 170 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTQ26P20P is a power MOSFET from IXYS, one of the leading providers of power semiconductor technology. This high-voltage, ultra-low gate-charge insulated gate bipolar transistor (IGBT) is used for a variety of applications, from high-voltage AC/DC switching applications to motor control and power distribution systems. This piece presents an overview of the application field and working principle of the IXTQ26P20P.

Application Field

The IXTQ26P20P is designed to be used in a variety of power application, such as AC/DC converters, motor drives, and power distribution systems. The MOSFET is suited for both high voltage applications and high power applications. It is capable of switching voltages up to 1200V and can handle up to 18A of continuous current. Due to its high current and voltage ratings, the IXTQ26P20P is ideally suited for controlling high current loads such as motors, LED lighting, and other high power applications.

Working Principle

The IXTQ26P20P is a power MOSFET that works on the principle of insulated gate bipolar transistor (IGBT). This type of transistor uses a bipolar junction transistor (BJT) combined with an insulated gate (MOSFET) structure to create a high-current switching device. In operation, the positive gate voltage causes a charge depletion layer to form on the drain side of the MOSFET. This results in a decrease in the resistance between the source and drain, allowing the current to flow through the MOSFET. When the gate voltage is decreased, the charge depletion layer disappears and the MOSFET reverts to its high resistance state, blocking any current flow.

The IXTQ26P20P is a high voltage, low gate charge MOSFET that is ideal for applications requiring high speed switching. The device has a maximum drain-source voltage (VDSS) of 1200V and can handle up to 18A of continuous current. The maximum gate-source voltage (VGSS) is +/- 20V. The device features a fast switching speed and low on-resistance (Ron) of 0.9mΩ.

Conclusion

The IXTQ26P20P is a high voltage/high power MOSFET used for a variety of applications, such as AC/DC converters, motor drives, and power distribution systems. Its working principle is based on IGBT technology, whereby a positive gate voltage causes a charge depletion layer to form on the drain side of the MOSFET, thus lowering the resistance between the source and drain and allowing current to flow. The IXTQ26P20P is characterized by a maximum VDSS of 1200V, a maximum continuous current of 18A, and a maximum VGSS of +/-20V.

The specific data is subject to PDF, and the above content is for reference

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