Allicdata Part #: | IXTQ30N60P-ND |
Manufacturer Part#: |
IXTQ30N60P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 30A TO-3P |
More Detail: | N-Channel 600V 30A (Tc) 540W (Tc) Through Hole TO-... |
DataSheet: | IXTQ30N60P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 540W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5050pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 82nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 240 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTQ30N60P is a type of Insulated-Gate Bipolar Transistor (IGBT) that belongs to the Nexperia family of IGBTs. It features an improved switching performance over standard IGBTs, which makes it particularly attractive for applications in power switching, motor drives and industrial automation.
An IGBT is a type of power transistor that uses a metal–oxide–semiconductor (MOS) field-effect transistor (FET) as the input gate and a bipolar junction transistor (BJT) as the output. It is also called a nonlinear semiconductor structure, as it behaves like a FET at low voltages, but like a diode at higher voltages. The IXTQ30N60P is a highly integrated IGBT, which is particularly effective in applications requiring high voltage operation, high current operation and fast switching times.
The IXTQ30N60P is an IGBT with a 30A maximum peak emitter current and a 600V maximum ereast voltage. It is designed for use in high current, high voltage applications such as motor drives, AC-DC and DC-DC converters, inverters and induction heating. The IXTQ30N60P offers a wide range of features, including enhanced switching performance, improved EMI performance, low on-state losses and low switching losses.
The IXTQ30N60P works through the concept of a "floating gate". In this type of power transistor, the control voltage applied to the input gate is used to charge the floating gate. This charge is then transferred to the output device, allowing it to switch on or off. When the input voltage is applied to the floating gate, it changes the threshold voltage of the output device, and thus switches the device on or off accordingly.
The IXTQ30N60P also offers significant advantages over standard BJT transistors, such as a lower voltage drop, lower on-state and turn-on losses, and higher switching speeds. Additionally, it can operate over a wide range of temperatures, up to 150°C, and has a high operating frequency, up to 100kHz. This makes it ideal for use in high-power applications.
The IXTQ30N60P is a great choice for industrial applications requiring fast switching speeds and high power output, such as motor and induction heating. Its features make it an ideal choice for applications in power switching, motor drives and industrial automation, offering enhanced performance and improved durability.
The specific data is subject to PDF, and the above content is for reference
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IXTQ180N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 180A TO-3... |
IXTQ180N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 180A TO-3... |
IXTQ182N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 182A TO-3... |
IXTQ200N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 200A TO-3... |
IXTQ200N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 200A TO-3... |
IXTQ220N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 220A TO-3... |
IXTQ220N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 220A TO-3... |
IXTQ230N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 230A TO-3... |
IXTQ240N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 240A TO-3... |
IXTQ250N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 250A TO-3... |
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