MMRF1310HSR5 Allicdata Electronics
Allicdata Part #:

MMRF1310HSR5-ND

Manufacturer Part#:

MMRF1310HSR5

Price: $ 60.07
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 2CH 133V 230MHZ
More Detail: RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300...
DataSheet: MMRF1310HSR5 datasheetMMRF1310HSR5 Datasheet/PDF
Quantity: 1000
50 +: $ 54.60360
Stock 1000Can Ship Immediately
$ 60.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS (Dual)
Frequency: 230MHz
Gain: 26.5dB
Voltage - Test: 50V
Current Rating: --
Noise Figure: --
Current - Test: 100mA
Power - Output: 300W
Voltage - Rated: 133V
Package / Case: NI-780S-4
Supplier Device Package: NI-780S-4
Description

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MMRF1310HSR5 is a high-frequency MOSFET transistor which operates in the radio frequency (RF) spectrum. It is widely used in various RF applications such as automotive, communication, satellite links, telecommunication, and various consumer electronics.

The MMRF1310HSR5 is a N-Channel MOSFET transistor designed for use in high-frequency applications. It has a maximum drain-source breakdown voltage of 12 V, an on-resistance of 1 Ω, and a maximum operating frequency of 5 GHz. The transistor is rated for a maximum power dissipation of 2 W, and has a maximum drain current of 1.5A. In terms of its switching performance, the transistor has a minimum turn-on time of 2 ns, and a maximum turn-off time of 3 ns.

One of the main advantages of the MMRF1310HSR5 is its low-noise operation. The transistor features low noise levels of -95 dBc/MHz at 4 GHz. Furthermore, the transistor has a high reverse isolation of =20 dB at 10 GHz, which ensures minimal crosstalk between different channels in the RF spectrum. This fact makes the MMRF1310HSR5 an ideal choice for use in systems requiring clean signals.

The MRIF1310HSR5 has several unique features that improve its performance in high-frequency applications. One of these features is its high reverse drain-source breakdown voltage. This feature allows the transistor to be used in higher frequency circuits, providing enhanced performance and improved efficiency. The transistor also has a wide range of gate capacitance options, which allow it to be used in a variety of different RF circuit designs.

The MMRF1310HSR5 has a number of applications in the consumer electronics industry. It is used for TV transmitters, mobile communication systems, and satellite receivers, among other consumer products. It is also used in automotive applications, such as car audio systems, as well as in medical applications, including medical imaging.

In terms of its working principle, the MMRF1310HSR5 MOSFET works by controlling the current flow between the source and drain using a gate voltage. As the gate voltage is increased, the amount of current flowing between the source and drain increases. Conversely, as the gate voltage is reduced, the amount of current flowing between the source and drain diminishes. This feature makes the MMRF1310HSR5 an ideal choice for use in circuits requiring precise control of the current between the source and drain.

In conclusion, the MMRF1310HSR5 is an ideal choice for use in high-frequency applications in the communication, automotive and consumer electronics fields. It is a low-noise MOSFET transistor with a wide range of gate capacitance options and high reverse drain-source breakdown voltage, making it an ideal choice for a variety of application fields. In terms of its working principle, the MMRF1310HSR5 operates by controlling the current flow between a source and a drain using a gate voltage, allowing for the precise control of current flowing between the source and drain.

The specific data is subject to PDF, and the above content is for reference

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