| Allicdata Part #: | MMRF1318NR1-ND |
| Manufacturer Part#: |
MMRF1318NR1 |
| Price: | $ 56.36 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | FET RF 110V 450MHZ |
| More Detail: | RF Mosfet LDMOS 50V 900mA 450MHz 22dB 300W TO-270 ... |
| DataSheet: |  MMRF1318NR1 Datasheet/PDF |
| Quantity: | 1000 |
| 500 +: | $ 51.24010 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | LDMOS |
| Frequency: | 450MHz |
| Gain: | 22dB |
| Voltage - Test: | 50V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 900mA |
| Power - Output: | 300W |
| Voltage - Rated: | 110V |
| Package / Case: | TO-270-4 |
| Supplier Device Package: | TO-270 WB-4 |
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The MMRF1318NR1 is a GaN Gen-IV Enhancement Mode High Electron Mobility Transistor (HEMT) developed by Mitsubishi Electric Corporation in Japan. It is a field-effect transistor (FET) used in radio frequency (RF) applications.
It is an enhancement-mode device, meaning that it turns on when the gate is made more positive with respect to the source. The device is rated for operation up to 6 GHz, and provides high power density, large voltage noise, and high stability. It is also highly efficient, and able to handle high amounts of power.
The device is made up of a single gate and source, an N-channel gate, and two separate drain contacts. It is a two-terminal device, meaning that it does not require additional components for proper operation. As a
The specific data is subject to PDF, and the above content is for reference
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