Allicdata Part #: | MMRF1009HR5TR-ND |
Manufacturer Part#: |
MMRF1009HR5 |
Price: | $ 348.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 110V 1.03GHZ NI-780S |
More Detail: | RF Mosfet LDMOS 50V 200mA 1.03GHz 19.7dB 500W NI-7... |
DataSheet: | MMRF1009HR5 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 316.43300 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.03GHz |
Gain: | 19.7dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 200mA |
Power - Output: | 500W |
Voltage - Rated: | 110V |
Package / Case: | SOT-957A |
Supplier Device Package: | NI-780H-2L |
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Introduction
The MMRF1009HR5 is a RF high power MOSFET amplifier transistor for mobile and industrial applications, offering excellent linearity, drain efficiency and power density. It is designed for long-range, high-power operation, such as in land-mobile, citizen’s band (CB), military and amateur radio applications, as well as other high frequency systems.
Application Fields of MMRF1009HR5
The MMRF1009HR5 is suitable for many applications including:
Radio Frequency (RF) amplifier;
CW to pulsed Amplifiers:
Power amplifiers;
High and low power amplifiers;
Mobile and base station power amplifier;
Wireless LAN (WLAN) applications;
RF pulse amplifier;
RF Power amplifier;
RF and High Frequency Applications.
Working Principle of MMRF1009HR5
The MMRF1009HR5 is a junction field-effect transistor (FET) and is primarily used as an amplifier in radio frequency (RF) applications. It is designed to amplify the input signal from an antenna, to an output signal used to charge the battery or power electronic devices. The device consists of two main parts: the drain and the source.
When an RF signal is applied to the input of the transistor, the drain-to-source voltage allows current to flow between the drain and source. The source voltage is normally held at 0V (Ground) and is used to control the FET gate. The input gate voltage which controls the signal from the gate to the source determines the current flow from the drain to the source.
The output signal is the result of a linear combination of the input signal, the drain-to-source voltage, and the gate voltage. Therefore, controlling the gate voltage allows for fine tuning of the drain-to-source voltage, which in turn controls the current flow, ultimately resulting in a powerful signal output.
Conclusion
The MMRF1009HR5 RF high power MOSFET amplifier is designed for a range of high power applications from radio frequency (RF) amplifiers to power amplifiers. The device consists of a drain and source connected with a voltage applied to the gate controlling the current flow resulting in a powerful output signal. With its excellent linearity, drain efficiency and power density, MMRF1009HR5 is great for long-range, high-power operation.
The specific data is subject to PDF, and the above content is for reference
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