MMRF2004NBR1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	2.7GHz
Gain:	28.5dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	77mA
Power - Output:	4W
Voltage - Rated:	65V
Package / Case:	TO-272-16 Variant, Flat Leads
Supplier Device Package:	TO-272 WB-16

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Introduction
The MMRF2004NBR1 is a GaN-based high-power, high-performance RF transistor designed for applications such as amplifiers and power supplies used in the automotive and industrial markets. This paper will discuss the application field and working principle of the MMRF2004NBR1.Application Field
The MMRF2004NBR1 transistor is designed for high-performance and high-power applications, such as RF amplifiers and power supplies. For example, it can be used as an amplifier in communication systems, as a power supply in automotive systems and as a power supply in industrial systems.The MMRF2004NBR1 has a very broad frequency range of 0.1 - 1000MHz, which makes it suitable for many different applications. It has an excellent power-handling capability, with a maximum drain-source voltage of 33V and a maximum drain current of 20A.Another advantage of the MMRF2004NBR1 is its exceptional thermal and electrical stability. It has a thermal resistance of 0.028 K/W, which is much lower than typical transistors, and it has a very good reverse decay time. All these characteristics make the MMRF2004NBR1 ideal for applications requiring performance and reliability.Working Principle
The MMRF2004NBR1 is a Gallium Nitride (GaN)-based field effect transistor (FET). It is a high-power and high-performance RF transistor that is specifically designed for applications such as amplifiers and power supplies. The device operates a standard FET structure consisting of a source, gate, and drain. The source and drain are connected to the gate, which is insulated from the substrate. When a voltage is applied to the gate, the current between the source and drain is controlled and is proportional to the gate voltage. This action allows for amplification and other linear functions.The working principle of this device is based on the principle of avalanche breakdown, which occurs when a high current is flowing in the channel. The avalanche breakdown causes the voltage to increase and the current flow to decrease. This allows the device to control the flow of current with high accuracy.The MMRF2004NBR1 also has an advanced gate control system that helps to extend the operational range of the device and improve the efficiency of the system. The gate control system is based on a Negative Channel Voltage Adaptation (NCVA) capability, which allows the device to adjust its gate voltage based on the channel voltage to obtain the most efficient performance.Conclusion
The MMRF2004NBR1 is a GaN-based high-performance, high-power RF transistor designed for applications such as amplifiers and power supplies used in the automotive and industrial markets. It has an exceptionally wide frequency range, a robust and reliable thermal and electrical stability, and a highly efficient gate control system. These features make the MMRF2004NBR1 an ideal choice for applications that require high-performance and reliability.

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