Allicdata Part #: | MMRF1320GNR1-ND |
Manufacturer Part#: |
MMRF1320GNR1 |
Price: | $ 19.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS 1.8--600MHZ 150W CW 50V |
More Detail: | RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.1dB 150... |
DataSheet: | MMRF1320GNR1 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 17.60600 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual) |
Frequency: | 230MHz |
Gain: | 26.1dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 150W |
Voltage - Rated: | 133V |
Package / Case: | TO-270BB |
Supplier Device Package: | TO-270 WB-4 Gull |
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The MMRF1320GNR1 is a RF MOSFET (metal oxide semiconductor field effect transistor) manufactured by ROHM Semiconductor, a global manufacturer of electronic devices and components. The MMRF1320GNR1 is a specifically designed high-frequency transistor for a wide range of applications such as wireless communication systems, receivers, frequency synthesizers, and so on. Its leading edge technology is a combination of advanced packaging technology, highly integrated circuits design and advanced process capability. This article will discuss the application field and working principle of the MMRF1320GNR1.
The MMRF1320GNR1 is part of a family of RF MOSFETs that are designed for improved current sieving and higher gain, enabling them to be used in a wide range of high-frequency applications.The major advantages of using MOSFETs instead of traditional bipolar transistors include higher packing density, low power consumption, cost savings, and noise reduction. Furthermore, MOSFETs are easier to fabricate, are more reliable and durable, thus making them ideal for long-term applications. Due to these advantages, the MMRF1320GNR1 is suitable for use in high frequency communication systems, receivers, frequency synthesizers, mixers and multipliers, power amplifiers and oscillators.
The MMRF1320GNR1 uses an enhancement-mode MOSFET structure with a silicon based N-channel for better electrical performance. This structure provides increased input and output impedances, higher gain and improved frequency response, which are extremely important for high-frequency applications. The MMRF1320GNR1 also features improved source follower characteristics, and is optimized to work up to 1.2 GHz.
The MMRF1320GNR1 can be controlled using various types of gate inputs. It can be used with DC GN with a single-ended gate input and the gate-source voltage can be varied from DC to more than 40V. The gate threshold voltage is 1.2V and the pinch-off voltage is 4.6V. The on-resistance is 1 ohm and the maximum drain-source current is 10.8A.
The working principle of the MMRF1320GNR1 is based on the same principles of all transistors. The central element of the MMRF1320GNR1 is a semiconductor material with a varying amount of free electrons which can be manipulated by applying small potential differences. When the gate voltage (Vgate) is increased, the free electrons are forced across the channel and the channel current flow is increased. This increases the channel conductivity and decrease the drain-source resistance. If the gate voltage is decreased, the channel conductivity will also decrease and the drain-source resistance will also increase. This is the basis of how an FET operates.
In summary, the MMRF1320GNR1 is a RF MOSFET designed for high-frequency applications. It uses an enhancement-mode MOSFET structure with a silicon based N-channel for better electrical performance. It also features improved source follower characteristics and is optimized to work up to 1.2 GHz. The gate threshold voltage is 1.2V, the pinch-off voltage is 4.6V and the on-resistance is 1 ohm. The working principle is based on varying the channel conductivity and the drain-source resistance by applying a small potential difference on the gate. The MMRF1320GNR1 is an ideal solution for high frequency communication systems, receivers, frequency synthesizers, mixers, multipliers, power amplifiers and oscillators.
The specific data is subject to PDF, and the above content is for reference
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