MMRF1317HSR5

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MMRF1317HSR5 transistors are among the most widely used types of metal-oxide semiconductor field effect transistors (MOSFETs) in the radio-frequency (RF) domain. This transistor from Premier FAR is well known for its applications in modern telecommunications, cellular, data transmission, industrial control, automotive, satellite, and electronic gaming products.

The MMRF1317HSR5 is a N Channel enhancement MOSFET with maximum drain-to-source voltage (VDS) of ±30 V and drain current (ID) of 1.0 A. It is also capable of withstanding gate-to-source voltage (VGS) up to ±12 V. These parameters make it suitable in RF circuits.

The operation principle of this power transistor is quite simple. When used as a switch, the transistor is turned on by introducing a positive voltage between the gate-to-source terminals. This voltage attracts the electrons to the region between the gate oxide layer and the source terminal, which thus forms a conducting path between the drain and the source terminals. The transistor is turned off by applying a negative voltage between the gate and the source terminal. This repels the electrons and thus terminates the flow of current between the two terminals.

The MMRF1317HSR5 is an important component in the radio frequency domain as it is capable of handling high frequencies ranging up to 20 GHz. It is also an effective switch for controlling RF energy as it is capable of switching on and off in nanoseconds. This transistor supports a variety of applications in modern communication systems such as mobile phones, satellite communications, automotive electronics, and other applications where very high frequencies are required.

It is because of its versatile operation and RF compatibility that the MMRF1317HSR5 has become one of the most preferred choices in the radio-frequency domain. It is easy to integrate with RF amplifiers, voltage-controlled oscillators, low-noise amplifiers and other RF circuits. Apart from this, it is also a good choice for controlling interference and electrical noise as it is capable of fast switching on and off with very low power consumption.

Overall, the MMRF1317HSR5 power transistor from Premier FAR is a great choice for radio-frequency applications. Its capability of switching on and off very fast and with very low power consumption makes it an ideal choice for a variety of RF circuits. Its versatility and rugged construction also make it a great choice in modern communication systems.

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