MMRF1316NR1 Allicdata Electronics
Allicdata Part #:

MMRF1316NR1TR-ND

Manufacturer Part#:

MMRF1316NR1

Price: $ 46.83
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 2CH 133V 230MHZ TO270
More Detail: RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 27dB 300W ...
DataSheet: MMRF1316NR1 datasheetMMRF1316NR1 Datasheet/PDF
Quantity: 1000
500 +: $ 42.56870
Stock 1000Can Ship Immediately
$ 46.83
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS (Dual)
Frequency: 230MHz
Gain: 27dB
Voltage - Test: 50V
Current Rating: --
Noise Figure: --
Current - Test: 100mA
Power - Output: 300W
Voltage - Rated: 133V
Package / Case: TO-270-4
Supplier Device Package: TO-270 WB-4
Description

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The MMRF1316NR1 is a high voltage and high current radio frequency (RF) metal oxide silicon field effect transistors (MOSFET) designed for use in applications requiring maximum performance.

The MMRF1316NR1 is a high current RF MOSFET designed for high frequency operation. It features a high voltage rating of 30V, high current rating of 800mA and an operating frequency of up to 1.5GHz. It is suitable for broadband amplifiers, digital radio transmitter and a variety of other RF power amplifying applications.

The MMRF1316NR1 is built with a unique feature called "self-limiting", which makes it ideal for RF power amplifiers. This feature enables the MOSFET to limit its own voltage, current and power dissipation, so it can protect itself from being destroyed by over-voltage, over-current and over-power events. This feature makes the transistor very reliable in operation and helps to ensure that it is safe and reliable to use.

The MMRF1316NR1 is also equipped with an integrated thermal protection circuit, which prevents the device from overheating by dissipating excess heat. This protects the device from damage caused by high temperature events and also helps to increase the device\'s reliability.

The MMRF1316NR1 features a low on/off gate resistance, which allows it to be used in low-noise applications such as digital radio transmitters. The low gate resistance also helps to reduce the amount of power consumed during operation, allowing for greater efficiency.

The MMRF1316NR1 has a wide range of operating temperatures which range from -55°C to +150°C. This wide range allows the device to be used in a variety of applications, including extreme conditions. This wide operating temperature range also helps to ensure that the device is durable enough to survive a range of environmental conditions.

The MMRF1316NR1 is built on a robust high temperature package which can withstand up to 200V. The package also features a low profile design, allowing the device to be used in applications with limited space. This low profile makes it easier to install and also increases the device\'s reliability.

Overall, the MMRF1316NR1 is a high voltage, high current RF MOSFET designed for use in a variety of applications, including high frequency operation and digital radio transmitter. The device is equipped with several features which help to ensure that it is durable, reliable and efficient in operation.

The specific data is subject to PDF, and the above content is for reference

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