MMRF5017HSR5

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The MMRF5017HSR5 is a Surface Mount RF Silicon MOSFET RF transistor for use in RF amplifier applications. This small signal transistor has an operating voltage (Vds) of 25V to 26V and a maximum drain source breakdown voltage (BVds) of 20V. It has a very low on-resistance of 0.46Ω, making it suitable for applications that require a low input and low output stage.

The MMRF5017HSR5 is a laterally diffused MOSFET (LDMOS), which means that it is produced using a process similar to CMOS. The LDMOS process enables the transistor to achieve higher gains and enjoy better linearity with low power consumption than other traditional MOSFETs. The addition of the LDMOS process also makes the MMRF5017HSR5 ideal for use in a variety of amplifier applications, including high efficiency linear amplifiers.

The MMRF5017HSR5 is designed to be used in amplifying signals in the frequency range of 17.7GHz and features a very low capacitance that is ideal for high frequency applications. This makes it suitable for use in devices such as wireless LAN access points, ad-hoc wireless networks, and other devices requiring robust RF transmission. In addition, the device has a low power consumption, making it ideal for battery powered applications.

The MMRF5017HSR5 operates at a temperature range of -55°C to 125°C and comes in a 3 pin package. The device is capable of handling high input power levels and has a low gate drive voltage range of 2.0V to 5.5V. The gate capacitance of the device is very low at only 20pF and the gate threshold voltage is -3.3V, providing excellent input power handling.

The MMRF5017HSR5 is designed with a sparse gate layout ensuring low gate-to-drain capacitance and reducing the electronic noise generated by the device. This device also boasts excellent power handling capabilities, with a drain current (Id) of up to 4A when operated with 25V supply voltage, allowing for high efficiency RF amplifications.

The MMRF5017HSR5 has an nominal operating frequency range of 0.05GHz to 17.7GHz, making it suitable for use in a variety of RF amplifier applications. The device\'s high frequency performance, combined with its robust design, makes it suitable for use in applications such as power amplifiers, signal line amplifiers and cable television amplifiers. The device is also ideal for use in medical signal amplifiers, such as those used in ultrasound imaging systems.

In conclusion, the MMRF5017HSR5 is a highly efficient and reliable RF transistor for RF amplifier applications. Its high frequency performance, combined with its robust design, make it ideal for a wide range of applications. It offers excellent power handling capabilities, low noise levels and low capacitance, making it suitable for use in battery powered applications. The device is capable of handling high input power levels and comes in a small 3 pin package.

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