MMRF1304GNR1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MMRF1304GNFR1 is a RF (radio frequency) enhancement mode phosphorous-doped Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is designed specifically for high-performance RF power applications in the cellular, wireless, satellite and wireless broadband networks.

The devices feature an enhancement mode MOSFET with low gate-source capacitance, low gate-drain capacitance, low thermal resistance and high breakdown voltage. The device is designed to provide very low thermal distortion, low signal distortion and low switching times, making them ideal for use in a wide range of applications.

The MMRF1304GNFR1 is designed for use in high-frequency RF power amplifiers and transmitters for cellular, satellite, and wireless broadband networks, that require high linearity, high efficiency, and wide dynamic range performance, as well as high-speed switching in highly linear, low inductance environments. The device is capable of providing excellent RF performance and reliability along with low power dissipation.

The MMRF1304GNFR1 is optimized for RF power applications operating up to 1.8 GHz while consuming very low levels of power, making it ideal for battery powered mobile devices. The device is also suitable for switching applications up to 1.8 GHz and digital applications up to 0.7 GHz. The device is designed for operation in Class 2 and radio transmitter applications.

The MMRF1304GNFR1’s working principle is based on the principle of field effect transistor or FET. The device operates by applying an electric field or gate voltage to a gate terminal of the transistor, which then modulates the current flowing between the source and drain terminals. This current is then amplified according to the gate voltage applied, thus controlling the current flow in the device.

The device also has a Metal Oxide Semiconductor (MOS) structure, which is composed of a layer of metal and a semiconductor material in between. A voltage applied to the gate terminal causes a depletion region to form around the gate and the channel region, thereby modulating the current and the voltage drop between the source and drain terminals. This modulation can then be used to control the current through the device in a wide range of applications, from high-speed switching to RF power amplifiers and transmitters.

The MMRF1304GNFR1 is an analog device, meaning that it does not require any digital circuitry for operation, as it can be directly interfaced with analog circuitry. The device is typically used to provide the control signals necessary for the operation of high-frequency circuits or to control the amplitude of signals passing through it.

In addition to its use in RF power and high-frequency applications, the MMRF1304GNFR1 is also suitable for use in switching and power management applications. The device also features an integrated protection feature, which prevents the device from entering an over-current state. This protection feature can be used to ensure reliable and efficient operation of the device.

The MMRF1304GNFR1 is an efficient and reliable device that has been developed specifically for high-performance RF power applications in wireless, cellular, satellite, and other wireless broadband networks. The device is capable of providing excellent RF performance and low power dissipation, while providing very low thermal distortion and low signal distortion. The device is easy to interface with analog circuitry, and its integrated protection feature ensures reliable and efficient operation.

The specific data is subject to PDF, and the above content is for reference