MMRF5014HR5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MMRF5014HR5 is a popular RF MOSFET transistor that is widely used in many applications today. The device is made of N-channel MOSFET power semiconductor material. It consists of two main components, the gate and the source. The gate provides a control current to vary the conductivity of the MOSFET, which in turn alters the current flow through the device. The source is a control voltage that controls the gate voltage. The MOSFET works on the principle that the voltage drop across the MOSFET is proportional to the drain current.

MMRF5014HR5 application field is divided in two categories - RF and power. RF application field uses the MOSFET as an amplifier in radio frequency communication systems. For example, it can be used as a power amplifier that operates at frequencies between 400MHz and 1GHz. It provides maximum power dissipation of 14 watts and has a very high gain. In the power side, it can be used as a switch in circuits that requires low on-resistance, high current handling capacity and low power dissipation. It has a high peak current of 6.5 Amps and an operating voltage range between 5V and 12V.

One of the advantages of using MMRF5014HR5 is its low on-resistance power dissipation. This means that less power is consumed when the device is switched on, resulting in savings in operating costs. It also has high power efficiency, which is important for some applications. The device also has good thermal stability and low gate capacitance, which enables higher frequencies and more stable performance. Additionally, the device is immune to electrostatic discharge, which makes it suitable for use in industrial and medical environments.

The working principle of MMRF5014HR5 is based on the principles of traveling-wave transistor (TWT) technology. The main component of the device is a spiral-shaped gate that has two electrodes. When a voltage is applied to these electrodes, it creates an electric field which will travel along the spiral arms of the gate. As the electrons move along the arms they oscillate at the frequency of the input signal, resulting in an amplified output.

The output signal of an MMRF5014HR5 is proportional to the input signal. This means that the output is stronger and more stable at lower frequencies. However, the output has low frequency distortion due to the high on-resistance and relatively high capacitance of the device. This makes the output unsuitable for high-frequency applications.

Overall, the MMRF5014HR5 is an excellent choice for applications that require low on-resistance, power-efficient operation and good thermal stability. It is well-suited for radio frequency communications systems, power switching, and industrial/medical applications. It has excellent power handling capabilities and good thermal stability, as well as good immunity to electrostatic discharge.

The specific data is subject to PDF, and the above content is for reference