Allicdata Part #: | MRF5S18060NBR1-ND |
Manufacturer Part#: |
MRF5S18060NBR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 1.88GHZ TO-272-4 |
More Detail: | RF Mosfet N-Channel 1.88GHz 60W TO-272 WB-4 |
DataSheet: | MRF5S18060NBR1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel |
Frequency: | 1.88GHz |
Gain: | -- |
Current Rating: | -- |
Noise Figure: | -- |
Power - Output: | 60W |
Package / Case: | TO-272BB |
Supplier Device Package: | TO-272 WB-4 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.MRF5S18060NBR1 Application Field and Working Principle
MRF5S18060NBR1 is a high power N-Channel lateral MOSFET. It is suitable for the full band VHF/UHF amplifiers operating in the commercial frequency band between 100MHz and 1000MHz.
Application Field
MRF5S18060NBR1 is designed to work in wide variety of industrial and consumer applications, such as:
- Wireless communication systems
- PA systems
- RF amplifiers
- Radar systems
The device is also suitable for RF amplifiers and oscillators operating in the commercial frequency band from 100MHz to 1000MHz. MRF5S18060NBR1 is also suitable for use in cellular applications such as mobile repeaters and handsets.
Working Principle
MRF5S18060NBR1 operates in enhancement mode. This type of MOSFET uses a gate-source voltage VGS which is applied to the gate relative to the source. This voltage determines the current flow between the source and drain. When the gate-source voltage is zero, no current flows through the device. When the gate-source voltage is increased, the current flow between the source and the drain increases exponentially.
The device has an on resistance of 1.8 Ohm and can provide up to 60 W of power with a drain-source voltage of 28V. The device has an off state leakage current of 50nA and can work in a wide temperature range from -55℃ to 175℃.
Conclusion
MRF5S18060NBR1 is an N-Channel lateral MOSFET device which is suitable for the full band VHF/UHF amplifiers operating in the commercial frequency band from 100MHz to 1000MHz. It can be used in a wide variety of industrial and consumer applications such as wireless communication systems, PA systems, RF amplifiers, and radar systems. The device has an on resistance of 1.8 Ohm, a maximum drain-source voltage of 28V and a maximum power of 60W. The device has an off state leakage current of 50nA and can work in a wide temperature range from -55℃ to 175℃.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MRF5S19060NBR1 | NXP USA Inc | -- | 1000 | FET RF 65V 1.99GHZ TO-272... |
MRF5S19060NR1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ TO-270... |
MRF5S9100NBR1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 68V 880MHZ TO-272-... |
MRF5S9100NR1 | NXP USA Inc | -- | 1000 | FET RF 68V 880MHZ TO-270-... |
MRF5S9101NBR1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 68V 960MHZ TO-272-... |
MRF5S9101NR1 | NXP USA Inc | 24.62 $ | 472 | FET RF 68V 960MHZ TO-270-... |
MRF5P20180HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-123... |
MRF5P20180HR6 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-123... |
MRF5P21180HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.16GHZ NI-123... |
MRF5P21180HR6 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.16GHZ NI-123... |
MRF5P21240HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-123... |
MRF5P21240HR6 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-123... |
MRF5S19060MBR1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ TO-272... |
MRF5S19060MR1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ TO-270... |
MRF5S19090HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-780... |
MRF5S19090HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-780... |
MRF5S19090HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-780... |
MRF5S19090HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-780... |
MRF5S19100HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-780... |
MRF5S19100HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-780... |
MRF5S19100HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-780... |
MRF5S19100HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-780... |
MRF5S19130HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-880... |
MRF5S19130HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-880... |
MRF5S19130HSR3 | NXP USA Inc | -- | 1000 | FET RF 65V 1.99GHZ NI-880... |
MRF5S19130HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-880... |
MRF5S19150HR3 | NXP USA Inc | -- | 1000 | FET RF 65V 1.99GHZ NI-880... |
MRF5S19150HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-880... |
MRF5S19150HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-880... |
MRF5S19150HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-880... |
MRF5S21045MBR1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 68V 2.17GHZ TO272-... |
MRF5S21045MR1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 68V 2.17GHZ TO270-... |
MRF5S21045NBR1 | NXP USA Inc | -- | 1000 | FET RF 68V 2.12GHZ TO272-... |
MRF5S21045NR1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 68V 2.12GHZ TO270-... |
MRF5S21090HR3 | NXP USA Inc | -- | 1000 | FET RF 65V 2.11GHZ NI-780... |
MRF5S21090HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.11GHZ NI-780... |
MRF5S21090HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.11GHZ NI-780... |
MRF5S21090HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.11GHZ NI-780... |
MRF5S21100HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
MRF5S21100HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
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