MRF5S18060NBR1 Allicdata Electronics
Allicdata Part #:

MRF5S18060NBR1-ND

Manufacturer Part#:

MRF5S18060NBR1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 1.88GHZ TO-272-4
More Detail: RF Mosfet N-Channel 1.88GHz 60W TO-272 WB-4
DataSheet: MRF5S18060NBR1 datasheetMRF5S18060NBR1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: N-Channel
Frequency: 1.88GHz
Gain: --
Current Rating: --
Noise Figure: --
Power - Output: 60W
Package / Case: TO-272BB
Supplier Device Package: TO-272 WB-4
Description

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MRF5S18060NBR1 Application Field and Working Principle

MRF5S18060NBR1 is a high power N-Channel lateral MOSFET. It is suitable for the full band VHF/UHF amplifiers operating in the commercial frequency band between 100MHz and 1000MHz.

Application Field

MRF5S18060NBR1 is designed to work in wide variety of industrial and consumer applications, such as:

  • Wireless communication systems
  • PA systems
  • RF amplifiers
  • Radar systems

The device is also suitable for RF amplifiers and oscillators operating in the commercial frequency band from 100MHz to 1000MHz. MRF5S18060NBR1 is also suitable for use in cellular applications such as mobile repeaters and handsets.

Working Principle

MRF5S18060NBR1 operates in enhancement mode. This type of MOSFET uses a gate-source voltage VGS which is applied to the gate relative to the source. This voltage determines the current flow between the source and drain. When the gate-source voltage is zero, no current flows through the device. When the gate-source voltage is increased, the current flow between the source and the drain increases exponentially.

The device has an on resistance of 1.8 Ohm and can provide up to 60 W of power with a drain-source voltage of 28V. The device has an off state leakage current of 50nA and can work in a wide temperature range from -55℃ to 175℃.

Conclusion

MRF5S18060NBR1 is an N-Channel lateral MOSFET device which is suitable for the full band VHF/UHF amplifiers operating in the commercial frequency band from 100MHz to 1000MHz. It can be used in a wide variety of industrial and consumer applications such as wireless communication systems, PA systems, RF amplifiers, and radar systems. The device has an on resistance of 1.8 Ohm, a maximum drain-source voltage of 28V and a maximum power of 60W. The device has an off state leakage current of 50nA and can work in a wide temperature range from -55℃ to 175℃.

The specific data is subject to PDF, and the above content is for reference

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