MRF5S21045MBR1

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MRF5S21045MBR1 is a part of Transistors - FETs, MOSFETs – RF, which is specially designed and manufactured to operate in high frequency applications which involve operating frequencies up to 1.2GHz. It is one of the most popular transistors used in RF applications today and is used to switch or amplify high frequencies, among other things.

Generally, MRF5S21045MBR1 have a high frequency performance, RF power, and current handling capability. It has a drain-source breakdown voltage of 57 V, a gate-source voltage of 30 V DC, and a drain-source on-state resistance of up to 0.8 ohms. It has a total power gain of 13.6 dB at 900 MHz and 8.6 dB at 1200 MHz. In addition, it has a power output rating of up to 39 Watts at 900 MHz.

This transistor has a simple structure, made up of a source, gate, and drain. The source connection is used to supply the current, gate connection is used to control the current, and the drain connection is used to receive the current. When a positive voltage is applied on the gate terminal with respect to the source, a channel is formed through which electrons can flow from the source to the drain, thus allowing current to flow through the device.

The MRF5S21045MBR1 is primarily used in radio frequency (RF) applications that require high gain and low noise. Its wide bandwidth and high power dissipation makes it ideal for a range of wireless applications, such as 5G base station amplifiers, cellular repeaters, RF transceivers, TV broadcast equipment, and other RF power applications. It also offers excellent performance in high efficiency and low voltage applications.

The MRF5S21045MBR1 is designed to handle high frequency, high power, and high thermal loads. It has an integrated heat sink which helps dissipate heat away from the device, allowing it to handle higher thermal loads. In addition, the device is designed to be operational in temperatures ranging from -40°C to +105°C so it can be used in a wide range of applications.

The MRF5S21045MBR1 is a versatile device for use in high frequency applications and can be used for a variety of purposes, from switching RF signals to amplifying them. It is a popular choice among design engineers due to its high power dissipation, wide bandwidth, and high gain specifications, making it ideal for a variety of high frequency applications.

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