MRF5S9080NBR1

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The MRF5S9080NBR1 is a silicon N-channel RF power field effect transistor (FET) from Freescale Semiconductor that is used in a wide variety of applications. The device is made up of SiGe Heterojunction Bipolar Transistor (HBT) technology and is optimized for use in applications where high-efficiency, bandwidth and linearity are required. The transistor can be used in the radio frequency (RF) and microwave broadcast, cellular, PCS, and WiMAX systems.

The MRF5S9080NBR1 is a 100-V, 10-A total device, with an operating frequency range of 0.1-3.5 GHz. It also offers superior thermal performance, with a maximum junction temperature of 175°C. The device is also optimized for low noise operation, with very low parasitic inductances.

When it comes to the operation of the MRF5S9080NBR1, it is based on the principle of “metal-oxide-semiconductor capacitance,” which is the fundamental concept behind all field effect transistors (FETs). The device is a voltage-controlled, three-terminal, normally-off device. It has a source terminal, a drain terminal, and a gate terminal. When a voltage is applied to the gate terminal, the field effect enables the device to remain off. However, when the voltage surpasses a certain threshold, the device will be turned on. The amount of voltage applied to the gate terminal determines how much current will flow through the device.

The MRF5S9080NBR1 is suitable for a wide variety of applications. These applications include Class E, Class F, and Class G power amplifiers, as well as preamplifiers, push-pull amplifiers, and input and output matching power amplifiers. It is also used in heterodyne receivers, phase-locked loops, phase controllers, and for switching applications. The device is also ideal for use in cellular base station, microwave, and point-to-point radio applications.

In conclusion, the MRF5S9080NBR1 is a silicon N-channel RF power FET from Freescale Semiconductor. The device is based on SiGe Heterojunction Bipolar Transistor (HBT) technology, and is optimized for use in applications requiring high efficiency, bandwidth, and linearity. It has a wide operating frequency range of 0.1-3.5 GHz, and offers superior thermal performance, with a maximum junction temperature of 175°C. It is also suitable for a wide variety of applications, such as Class E, Class F, and Class G power amplifiers, preamplifiers, and push-pull amplifiers.

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