MRF5S9080NR1 Allicdata Electronics
Allicdata Part #:

MRF5S9080NR1-ND

Manufacturer Part#:

MRF5S9080NR1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 65V 960MHZ TO-270-4
More Detail: RF Mosfet LDMOS 26V 600mA 960MHz 18.5dB 80W TO-270...
DataSheet: MRF5S9080NR1 datasheetMRF5S9080NR1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 960MHz
Gain: 18.5dB
Voltage - Test: 26V
Current Rating: --
Noise Figure: --
Current - Test: 600mA
Power - Output: 80W
Voltage - Rated: 65V
Package / Case: TO-270AB
Supplier Device Package: TO-270 WB-4
Description

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The MRF5S9080NR1 is a member of the High Gain Expansion group of field effect transistors (FETs) designed for use in the VHF and UHF frequency bands. It is packaged in an eight-lead surface-mount plastic package. Its construction consists of a heat-dissipating aluminum alloy chassis, a silicon monolithic die, metallized drain regions, and a ribbon bond connection from gate to source.

The MRF5S9080NR1 is a wideband (f>250MHz) enhancement-mode FET device specifically conceived for use in broadcast applications. It is ideal for use in Class AB and Class C linear amplifiers for DX (direct) and FM broadcast applications. Due to its large transconductance and high gain, the device is suitable for use in push-pull linear amplifiers and oscillators as well.

The working principle of the MRF5S9080NR1 can be understood by considering how an FET amplifies a signal. When a signal is applied to an FET gate, a depletion region is created at the junction of the gate and the source. This depletion region creates an electric field (also known as a gate-source field) between the gate and the source that controls the conductivity of the channel through the FET. When the gate voltage is increased beyond the threshold voltage, the electric field increases and the channel resistance decreases, which allows greater current to flow in the channel. Unwanted noise is minimized, since the current is mostly restricted to the channel and not the off-state regions.

The MRF5S9080NR1 is ideal for use in VHF/UHF amplifiers and oscillators for broadcast applications such as DX and FM broadcast. For example, an oscillator can be built using the device with a simple tuned circuit. The device\'s large transconductance makes it well suited for the design of power amplifiers, particularly in the VHF/UHF frequency ranges.

In summary, the MRF5S9080NR1 is a wideband enhancement-mode FET designed for use in VHF/UHF applications. The device has a large transconductance and high gain, making it suitable for use in push-pull amplifiers and oscillators. Its small size and ease of use make it an ideal choice for broadcast applications such as DX and FM broadcast.

The specific data is subject to PDF, and the above content is for reference

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