MRF7S15100HR3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	1.51GHz
Gain:	19.5dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	600mA
Power - Output:	23W
Voltage - Rated:	65V
Package / Case:	NI-780
Supplier Device Package:	NI-780
Base Part Number:	MRF7S15100

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MRF7S15100HR3 is a type of transistor that belongs to a larger family of similar transistors known as Field Effect Transistors (FETs). FETs are semiconductor devices that employ a voltage level to control their current flow. This is opposed to the more common type of transistor called a bipolar junction transistor that uses a current level to control its current flow.MRF7S15100HR3 belongs to the MOSFET subfamily which stands for metal-oxide-semiconductor field-effect transistor. It is a type of unipolar transistor that contains three terminals: the gate, the source and the drain. A voltage level applied to the gate terminal controls the current flow between the source and drain terminals, which is what makes it different from a bipolar transistor. In addition to this, the MOSFET is also capable of operating at very high frequencies for their use in radio frequency (RF) applications. The MRF7S15100HR3 has a variety of application fields. It can be used as a power amplifier in radio or digital broadcast. It can also be used as a voltage regulator to control the output voltage in different applications such as air conditioners and electric vehicles. Other applications include being used as an oscillator to generate an RF signal and as a level shifter to match the voltage levels between two circuits.The working principle of the MRF7S15100HR3 is relatively simple. When a voltage level is applied to the gate terminal, a gate-source voltage is established, which in turn creates an electric field between the gate and the source. This electric field acts like a barrier and prevents current flow even when a voltage is applied to the drain. The strength of this field is determined by the voltage applied to the gate terminal, making it possible to control the current flow between the source and the drain. The main advantage of MOSFET transistors is that they require very little power to control their current flow. This makes them ideal for power dissipation sensitive applications such as those found in mobile devices. Another advantage is that MOSFET transistors are capable of switching very rapidly in comparison to bipolar transistors. This makes them suitable for high-frequency and high-speed applications.In summary, the MRF7S15100HR3 is a type of MOSFET transistor that is used in a variety of RF applications, such as power amplifying, voltage regulation, oscillation, and level shifting. It is capable of operating at very high frequencies, while being able to switch rapidly and with very little power dissipation. The working principle of the MRF7S15100HR3 is based on the electric field generated between the gate and the source terminals, which is then used to control the current flow between the source and the drain.

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