MRF7S27130HSR3

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The MRF7S27130HSR3 is a high-performance N-channel enhancement-mode lateral double-diffused MOSFET, designed primarily for use in large-signal transmission applications and power amplifier stages. It operates in a wide range of frequencies and power levels, offering superior efficiencies, high breakdown voltages, and low gate and drain capacitances. The MRF7S27130HSR3 is versatile enough to be used in a broad range of applications, including high-frequency radios and phased array antennas, along with transmitters and receivers for power amplifiers and power amplifier designs in mobile and fixed communications systems. In addition, the MRF7S27130HSR3 can be used as an active power management solution in systems requiring high capacitance switching with fast switching speeds and very high performance, such as automotive systems.

The working principle of the MRF7S27130HSR3 is similar to that of all other field effect transistors. As voltage is applied to the gate contact of the transistor, it causes electric fields to form across the entire channel between the source and the drain. This in turn induces a charge on the channel, which controls the amount of current that passes through it. When less voltage is applied to the gate, the induced charge decreases, and less current passes through the transistor. Conversely, when more voltage is applied to the gate, the induced charge increases, allowing more current to pass through the transistor.

The MRF7S27130HSR3 is the perfect Fit-for-Purpose (FFP) transistor for RF applications. It is designed to provide a higher operating frequency, higher voltage breakdown, lower noise and higher gain than standard power transistors. It features a high-voltage output stage capable of withstanding up to 250 volts, and a high-efficiency drain current of up to 150 milliamps. The MRF7S27130HSR3 also has very low gate and drain capacitances for optimized switching performance. This transistor is suitable for both linear and digital modulation in radio applications, with switching performance and high-efficiency power handling suited for high-power, high-frequency applications.

The MRF7S27130HSR3 can be used in a wide variety of applications ranging from high-frequency radio systems to antenna array and transceiver applications. This high-performance transistor is also suitable for power amplifier designs in mobile and fixed communications systems, as well as an active power management solution in automotive applications. Whatever the application, the MRF7S27130HSR3 is designed to provide an efficient, reliable power solution.

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