MRF7S21170HR5

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	2.17GHz
Gain:	16dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.4A
Power - Output:	50W
Voltage - Rated:	65V
Package / Case:	NI-880
Supplier Device Package:	NI-880
Base Part Number:	MRF7S21170

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MRF7S21170HR5 is a high voltage, high power Gallium Nitride (GaN) enhancement-mode power field effect transistor (FET). It is suitable for operation in the industrial 2180-5800MHz frequency band. The device operates from a +12V dc voltage supply with a maximum drain current of 70A.The MRF7S21170HR5 has a two-stage enhancement-mode structure. It consists of a gate structure, which regulates the current flow, and a drain structure, which contains a drain layer and gate oxide layer. The device operates in the enhancement-mode, in which no gate current is required.The gate of the MRF7S21170HR5 is composed of a semi-insulating substrate, a gate-layer and a gate metallization. The gate-layer is responsible for the control of the drain current. It is composed of a doping region, which has a high concentration of impurities, and a low concentration region. The doping region determines the threshold voltage of the device and the low-concentration region determines the maximum drain current that can be achieved with the stability of the device structure.The drain structure of the MRF7S21170HR5 is composed of a drain layer and a gate oxide layer. The drain layer consists of drain electrodes and drain-gate contacts. The drain layer is responsible for the modulation of the drain current. The gate oxide layer is responsible for the modulation of the threshold voltage.The MRF7S21170HR5 can be used in various applications such as WAN, LAN, cellular, microwave, satellite and telecommunication systems. It can also be used in industrial, medical, automotive and avionics applications.The device can be used in both linear and non-linear applications. In linear applications, the device regulates the current flow to the drain accurately while in non-linear applications the device operates as an amplifier and enables amplification of small signal levels.The operation of the device is based on the principle of field effect transistors (FETs). A FET is a three-terminal semiconductor device that is capable of controlling and regulating the current flow between the source and the drain. The current flow is controlled by the electric field produced between the gate and the source. When a voltage is applied between the gate and the source, an electric field is produced which attracts the majority carriers from drain giving them the energy to travel from the source to the drain. The magnitude and direction of the current flow can be controlled with the applied voltage on the gate.The MRF7S21170HR5 is suitable for operation in WAN, LAN, cellular, microwave, satellite and telecommunication systems due to its ability to handle high voltages and currents. It is also suitable for industrial, medical, automotive and avionics applications. The device can be used in both linear and non-linear applications making it a versatile device. The device operates on the principle of field effect transistors making it a reliable and efficient device.

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