
Allicdata Part #: | MRF7S19170HSR3-ND |
Manufacturer Part#: |
MRF7S19170HSR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 1.99GHZ NI-880S |
More Detail: | RF Mosfet LDMOS 28V 1.4A 1.99GHz 17.2dB 50W NI-880... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.99GHz |
Gain: | 17.2dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.4A |
Power - Output: | 50W |
Voltage - Rated: | 65V |
Package / Case: | NI-880S |
Supplier Device Package: | NI-880S |
Base Part Number: | MRF7S19170 |
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The MRF7S19170HSR3 transistor is a high power, high gain, N-channel, depletion-mode metal oxide semiconductor field effect transistors. It is widely used in the field of radio frequency (RF) applications. This article will explain the application field of MRF7S19170HSR3 and the underlying principles of its working.
Applications of MRF7S19170HSR3
The MRF7S19170HSR3 transistors can be used in various applications. It can be used as a switch in digital circuits and as a gate in logic gates. It is also used in amplifiers, receivers, transmitters and oscillators. It is also used in stage switching and many other kinds of circuits.
MRF7S19170HSR3 are used in RF applications. It offers high levels of gain and efficiency at high frequencies. It can operate up to 6GHz, making it suitable for various applications such as mobile phones, Wifi and radio broadcast systems. It can also be used in amplifiers, mixers, oscillators and antennas. Due to its high levels of power and gain, MRF7S19170HSR3 are used in applications where high levels of accuracy and performance are required.
Working Principle of MRF7S19170HSR3
The MRF7S19170HSR3 is a depletion-mode MOSFET, which works by controlling the flow of electrons between two terminals. The two terminals are the gate, where the voltage is applied, and the drain, where the current flows. The MRF7S19170HSR3 works by varying the voltage at the gate. When the voltage at the gate is higher than the voltage at the drain, then the electrons can flow. The MOSFET can be used as a switch by applying a voltage to the gate, which will allow it to open or close.
The MRF7S19170HSR3 is also a high power, high gain device. This means that it can provide high levels of power and gain at high frequencies. By applying a higher voltage at the gate, the drain current increases, allowing more electrons to flow between the two terminals. This increases the power and gain of the device, allowing it to be used in applications that require these levels of performance.
The MRF7S19170HSR3 transistors are used in many applications due to their high performance and versatility. They are used in RF applications for their ability to provide high levels of power and gain at high frequencies. They are also widely used in digital circuits and logic gates. This makes them highly useful in many applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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MRF7S16150HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.66GHZ NI-780... |
MRF7S15100HSR3 | NXP USA Inc | 85.45 $ | 1000 | FET RF 65V 1.51GHZ NI780S... |
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MRF7S18125BHSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.93GHZ NI780R... |
MRF7S35120HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 3.5GHZ NI-780S... |
MRF7S21110HR3 | NXP USA Inc | -- | 1000 | FET RF 65V 2.17GHZ NI-780... |
MRF7S21210HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
MRF7S19100NR1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ TO270-... |
MRF7S19080HR3 | NXP USA Inc | -- | 1000 | FET RF 65V 1.99GHZ NI-780... |
MRF7S38040HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 3.6GHZ NI-400S... |
MRF7S21170HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-880... |
MRF7S19170HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-880... |
MRF7P20040HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 2CH 65V 2.03GHZ NI... |
MRF7S18125BHSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.93GHZ NI780R... |
MRF7S27130HSR3 | NXP USA Inc | -- | 1000 | FET RF 65V 2.7GHZ NI-780S... |
MRF7S18170HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.81GHZ NI-880... |
MRF7S21210HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
MRF7S27130HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.7GHZ NI-780R... |
MRF7S38010HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 3.6GHZ NI-400R... |
MRF7S35015HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 3.5GHZ NI-400S... |
MRF7S24250NR3 | NXP USA Inc | 82.71 $ | 1000 | TRANS RF LDMOS 250W 32VRF... |
MRF7S16150HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.66GHZ NI-780... |
MRF7S24250N-3STG | NXP USA Inc | 0.69 $ | 1000 | MRF7S24250N-3STGRF Mosfet |
MRF7S15100HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.51GHZ NI780R... |
MRF7S35120HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 3.5GHZ NI-780S... |
MRF7S38075HSR3 | NXP USA Inc | -- | 1000 | FET RF 65V 3.6GHZ NI-780S... |
MRF7S19080HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-780... |
MRF7S21150HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
MRF7S38010HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 3.6GHZ NI-400S... |
MRF7S21080HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
MRF7S16150HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.66GHZ NI-780... |
MRF7S15100HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.51GHZ NI780R... |
MRF7S19080HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-780... |
MRF7S21150HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
MRF7S18125AHR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.88GHZ NI780R... |
MRF7S18125AHR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.88GHZ NI780R... |
MRF7S27130HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.7GHZ NI-780S... |
MRF7S18125AHSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.88GHZ NI780S... |
MRF7S38040HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 3.6GHZ NI-400R... |
MRF7S38075HR5 | NXP USA Inc | -- | 1000 | FET RF 65V 3.6GHZ NI-780R... |
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