MRF7S19170HSR3 Allicdata Electronics
Allicdata Part #:

MRF7S19170HSR3-ND

Manufacturer Part#:

MRF7S19170HSR3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 65V 1.99GHZ NI-880S
More Detail: RF Mosfet LDMOS 28V 1.4A 1.99GHz 17.2dB 50W NI-880...
DataSheet: MRF7S19170HSR3 datasheetMRF7S19170HSR3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 1.99GHz
Gain: 17.2dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 1.4A
Power - Output: 50W
Voltage - Rated: 65V
Package / Case: NI-880S
Supplier Device Package: NI-880S
Base Part Number: MRF7S19170
Description

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The MRF7S19170HSR3 transistor is a high power, high gain, N-channel, depletion-mode metal oxide semiconductor field effect transistors. It is widely used in the field of radio frequency (RF) applications. This article will explain the application field of MRF7S19170HSR3 and the underlying principles of its working.

Applications of MRF7S19170HSR3

The MRF7S19170HSR3 transistors can be used in various applications. It can be used as a switch in digital circuits and as a gate in logic gates. It is also used in amplifiers, receivers, transmitters and oscillators. It is also used in stage switching and many other kinds of circuits.

MRF7S19170HSR3 are used in RF applications. It offers high levels of gain and efficiency at high frequencies. It can operate up to 6GHz, making it suitable for various applications such as mobile phones, Wifi and radio broadcast systems. It can also be used in amplifiers, mixers, oscillators and antennas. Due to its high levels of power and gain, MRF7S19170HSR3 are used in applications where high levels of accuracy and performance are required.

Working Principle of MRF7S19170HSR3

The MRF7S19170HSR3 is a depletion-mode MOSFET, which works by controlling the flow of electrons between two terminals. The two terminals are the gate, where the voltage is applied, and the drain, where the current flows. The MRF7S19170HSR3 works by varying the voltage at the gate. When the voltage at the gate is higher than the voltage at the drain, then the electrons can flow. The MOSFET can be used as a switch by applying a voltage to the gate, which will allow it to open or close.

The MRF7S19170HSR3 is also a high power, high gain device. This means that it can provide high levels of power and gain at high frequencies. By applying a higher voltage at the gate, the drain current increases, allowing more electrons to flow between the two terminals. This increases the power and gain of the device, allowing it to be used in applications that require these levels of performance.

The MRF7S19170HSR3 transistors are used in many applications due to their high performance and versatility. They are used in RF applications for their ability to provide high levels of power and gain at high frequencies. They are also widely used in digital circuits and logic gates. This makes them highly useful in many applications.

The specific data is subject to PDF, and the above content is for reference

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