Allicdata Part #: | MRF7S21110HSR3-ND |
Manufacturer Part#: |
MRF7S21110HSR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 2.17GHZ NI-780S |
More Detail: | RF Mosfet LDMOS 28V 1.1A 2.17GHz 17.3dB 33W NI-780... |
DataSheet: | MRF7S21110HSR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.17GHz |
Gain: | 17.3dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.1A |
Power - Output: | 33W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S |
Supplier Device Package: | NI-780S |
Base Part Number: | MRF7S21110 |
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MRF7S21110HSR3 Application Field and Working Principle
The MRF7S21110HSR3 transistor is a type of RF field effect transistor (FET). It is designed to provide superior performance in high frequency, high power operations. This type of transistor is commonly used in applications where power and frequency are important factors, such as in wireless and satellite communications. This article will discuss the application field and working principle of the MRF7S21110HSR3 transistor.
Applications
The MRF7S21110HSR3 transistor is typically used in applications that require a high level of power and frequency. It is commonly used in radio and satellite communication systems, as well as in power amplifiers for audio and video applications. The transistor is also used in military and avionics applications, as well as in communications and radar systems.
The MRF7S21110HSR3 is also used in industrial applications, such as for heating and welding operations, and in motor control electronics. The transistor is also used in automotive applications, such as in vehicle audio systems.
Working Principle
The MRF7S21110HSR3 transistor is a type of field-effect transistor (FET) with a depletion-mode construction. This type of transistor uses a gate, source, and drain to control the current flow. In a depletion-mode FET, the drain current is normally conducted until a specific level of voltage is applied to the gate, at which point the drain current is cut off.
The MRF7S21110HSR3 is an insulated gate FET (IGFET), which is an enhanced form of the standard FET. The insulated gate helps to protect the gate from external interference, allowing the transistor to operate at high frequencies and higher power levels. The transistor also offers very low gate-to-drain capacitance, which helps to minimize signal distortion when operating at high frequencies.
The MRF7S21110HSR3 is also designed to be extremely efficient, with a drain efficiency up to 90%. This efficiency helps to minimize power consumption, making the transistor ideal for applications where power conservation is important.
Conclusion
The MRF7S21110HSR3 is a type of insulated gate FET designed for operation in high frequency and high power applications. The transistor offers a high drain efficiency, a low gate-to-drain capacitance, and very low power consumption. The MRF7S21110HSR3 is commonly used in radio and satellite communication systems, power amplifiers, and other high-power and high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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MRF7S19080HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-780... |
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MRF7S21080HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
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MRF7S21110HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
MRF7S21110HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
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