MRF7S18125AHSR5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - FETs, MOSFETs - RF

MRF7S18125AHSR5 is a product introduced by NXP Semiconductors designed for RF applications. Being part of the RF FET family, it has 50V drain source voltage and 11.5A drain current, making it suitable for a wide range of applications. This article will discuss the application field and working principle of MRF7S18125AHSR5.

Application Field

MRF7S18125AHSR5 is most commonly used in radio frequency amplifier applications, where it can offer low noise and low distortion signals. It can be used in base station applications that require linear amplification of high power signals. With proper bias, this transistor allows for proper signal processing and maximum efficiency. Additionally, MRF7S18125AHSR5 is suitable for applications in the industrial, scientific and medical (ISM) frequency band, such as RF communications and RFID. It can also be used in automotive applications.

Working Principle

MRF7S18125AHSR5 is a type of FET (Field-Effect Transistor) that operates by modulating the electric field transmitted between source and drain. This is achieved by applying a voltage on the gate, which in turn modulates the current flow between source and drain. The output of the device is a voltage that is dependent on the source and drain voltages, as well as the applied gate voltage. The doping profile of the device creates an electric field between the source and drain terminals, which can be controlled by a voltage applied to the gate.

MRF7S18125AHSR5 is also designed to offer benefits in terms of low noise, high gains and high efficiency. This is achieved by using a shielded gate between the source and drain, which reduces the effect of both the parasitic capacitance and inductance. Additionally, the device features a low parasitic capacitance on the gate, which allows for an increased signal-to-noise ratio.

Conclusion

MRF7S18125AHSR5 is a transistor suited for radio frequency amplifier applications that offers increased signal-to-noise ratio, low noise and high gains, along with other benefits. It can be used in various applications such as base station amplifiers, RF communications and RFID. Additionally, it works by modulating the electric field between source and drain and can be controlled via a voltage applied to the gate.

The specific data is subject to PDF, and the above content is for reference