MRF7S18125BHR5

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Introduction

MRF7S18125BHR5 is a Conductivity-modulated Lateral Double Diffused Metal Oxide Semiconductor Field Effect Transistor (CDMOS FET) used in applications such as surface-mount RF power amplifiers and power controllers.

Applications

MRF7S18125BHR5 is designed for power applications in the frequency range of 700 MHz to 6 GHz. The transistor is well-suited for the following applications:

• High-speed amplifiers and receivers
• Low noise amplifiers (LNAs)
• Pulsed power amplifiers
• Power control applications with high speed turn-on/turn-off times
• Emission control systems in automotive applications
• GPS and wireless communication systems
• RFID and spacecraft communication systems

Working Principle

The MRF7S18125BHR5 is a lateral double diffused MOSFET (LDMOS), meaning that the drain and source doping regions of the FET are both heavily doped. Therefore, it has a lower gate capacitance, which makes it suitable for high-frequency operation.

The transistor consists of two back-to-back (BTB) MOSFETs connected in parallel so that two anti-parallel currents can flow from the gate to the source and from the drain to the source. This allows for much greater current capacity as well as improved power efficiency.

The device is also designed for high speed, with a transition frequency (fT) of 500MHz. The device is constructed from two N-type and two P-type LDMOS transistors, with a gate oxide layer of 9.1nm (90A).

The main advantage of the MRF7S18125BHR5 is its ability to maintain large power output levels at high frequency with low gate bias voltages. As the operating frequency increases, the gate bias voltage decreases, resulting in increased efficiency, improved power density and reduced power dissipation. This makes the device extremely suitable for high power, high efficiency applications.

Conclusion

The MRF7S18125BHR5 is an excellent choice for the design of surface-mount RF power amplifiers and power controllers. Its high-speed switching, low gate bias operation and good efficiency make it well-suited for applications in the 700 MHz to 6 GHz range.

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