MRF7S21210HR3

The MRF7S21210HR3 is an N-channel enhancement-mode power Field-Effect Transistor (FET). It is a small signal FET mainly used for RF applications such as amplifiers, switches, modulators and oscillators. It is made from silicon materials and has a one pocket package, making it a cost-effective and reliable option for RF designs.

The drain and gate terminals are very small in size so it provides a high-level of integration for designs. The gate oxide is also protected reducing the chances of latch up. It also features a gate protected pinch-off region, making it ideal for high-speed switching applications.

The MRF7S21210HR3 is designed to be used in mid-power amplifier applications. The device has an output power of up to 10W and a drain efficiency of up to 70%. It also has a drain-source Breakdown Voltage of 22V, making it suitable for use in a variety of operating conditions.

The MRF7S21210HR3 has a drain-source breakdown voltage of 22V and a drain-source on resistance of 5.5 ohms. It is designed to be used in conjunction with a power supply but can also be used with a single supply. It also has a maximum operating temperature of 150°C making it suitable for use in high temperature environments.

The MRF7S21210HR3 works on the principal of field-effect electron transfer. It consists of a P-type material semiconductor substrate that has a gate insulated by a gate oxide layer. A voltage is applied to the gate, which creates a field between the gate and the source-drain region of the transistor. As the gate voltage changes, the electric field strength varies which in turn modulates the conductivity of the channel and consequently the drain current.

The MRF7S21210HR3 is a cost-effective option for use in many RF designs. It features a high breakdown voltage and low on-resistance and is suitable for use in mid-power amplifier applications. It also has the advantage of being able to operate in high temperature environments and has a very small size making it ideal for integrating into small devices. It is a reliable option for many applications and is an excellent choice for use in RF designs.