MRF7S38010HR3

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The MRF7S38010HR3 is an RF HEMT which can be used in applications such as WiMAX, LTE, 5G cellular infrastructure, and more. It is based on an N-Channel enhancement mode, GaAs-based high power transistor, with high drain current and a low Vgs(th). The transistor features an integrated thermal protection circuit to safeguard devices from overheating, as well as a high BR, high linearity, and excellent insertion loss. The performance of the MRF7S38010HR3 has made it an increasingly popular choice in high power applications.

MRF7S38010HR3 Application Field

The MRF7S38010HR3 RF HEMT transistor is suitable for use in applications such as WiMAX base station push-pull amplifiers, LTE and 5G base station infrastructure, high power amplifiers, amplifier circuits, and other applications requiring high linearity. It is also suitable for use in a broad range of cellular base station applications.

MRF7S38010HR3 Working Principle

The MRF7S38010HR3 RF HEMT transistor is based on an N-channel enhancement mode GaAs-based high power transistor with a low Vgs(th) and a high drain current. The performance characteristics of the device ensure high linearity and excellent insertion loss. The device also features an integrated thermal protection circuitry to safeguard devices from overheating.

The device works by applying an electric field across a thin layer of semiconductor material. This electric field creates an inversion layer, which enables the current to flow from the source to the drain. The gate voltage controls the current flow and is used to regulate the power being delivered to the device. The device also features integrated protection circuitry to prevent the device from overheating, which can cause destruction of the gate oxide.

The device features a high breakdown voltage and a low gate capacitance, resulting in a higher voltage gain and better linearity. The device also features a high slew rate and excellent transient response, enabling it to handle high switching frequencies. The device also features excellent frequency stability and linearity, which makes it ideal for use in high power applications.

In summary, the MRF7S38010HR3 RF HEMT transistor offers a combination of high linearity and excellent insertion loss, making it suitable for use in a wide range of applications, including WiMAX base station push-pull amplifiers, LTE, and 5G base station infrastructure, high power amplifiers, amplifier circuits, and other applications requiring high linearity. Its excellent performance characteristics, combined with its low Vgs(th) and high drain current, make it an increasingly popular choice in RF HEMT transistor applications.

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