NE68539-A

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RF bipolar transistors are used wherever higher speed and/or higher power than is achievable with standard BJTs is required. An example of this is the NE68539-A, by NewEdge Signal Solutions. The NE68539-A is an RF amplifier featuring an excellent gain/bandwidth product and a low noise figure. In this article we will discuss the application fields and working principle of this device.

Application Fields of the NE68539-A

The NE68539-A is a radio frequency (RF) amplifier that is suitable for use in a variety of applications. The amplifier offers a gain/bandwidth product of 6GHz, making it suitable for high-speed radio frequency applications. The device is also suitable for use in low-noise amplifiers (LNA) and high-linearity amplifiers such as transmit/receive (T/R) amplifiers, as well as for amplifying low-level signals for communication receivers.

The NE68539-A is well-suited for use in cellular infrastructure, such as base stations, mobile handsets, and femtocell applications, as well as satellite communication systems. The amplifier is also suitable for use in ISM band applications and wireless audio applications. The device is designed to work over a wide frequency range, from 400MHz to 6GHz, making it suitable for a variety of applications.

Working Principle of the NE68539-A

The NE68539-A is a bipolar transistor-based amplifier. The device is composed of two N-type (NPN) transistors, which form the input and output stages. The input stage is typically a common-emitter configuration while the output stage is typically a common-collector configuration.

The bipolar transistors are connected in a cascode configuration. This configuration provides a very high gain and bandwidth as well as excellent linearity, making it ideal for RF applications. The NE68539-A also features low out-of-band noise, which is ideal for use in low-noise amplifiers.

In operation, the device amplifies the input signal by using the NPN transistors to control the voltage gain of the device. The cascade configuration allows for high levels of gain and bandwidth as well as excellent linearity. The device also features low power consumption, making it well-suited for use in battery-powered applications.

Conclusion

The NE68539-A is a bipolar transistor-based, RF amplifier. The amplifier offers a high gain/bandwidth product, low noise figure, and low power consumption, making it ideal for a variety of RF applications, such as cellular infrastructure, satellite communication systems, and ISM band applications. The amplifier is composed of two NPN transistors connected in a cascode configuration, which provides excellent gain, linearity, and bandwidth.

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