NE68539-T1-A Allicdata Electronics
Allicdata Part #:

NE68539-T1-A-ND

Manufacturer Part#:

NE68539-T1-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR NPN SOT-143
More Detail: RF Transistor NPN 6V 30mA 12GHz 180mW Surface Moun...
DataSheet: NE68539-T1-A datasheetNE68539-T1-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 11dB
Power - Max: 180mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143
Description

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The NE68539-T1-A is a medium gain, low-noise and low-current RF bipolar junction transistor (BJT). It has a wide range of applications in industry, from communication devices and power amplifiers, to military and aerospace applications. The NE68539-T1-A is also a low-noise transistor, making it well suited for high-sensitivity receivers and other RF devices. The NE68539-T1-A has the ability to operate with either ground or floating substrate and can be used in single-ended or differential configurations.

The NE68539-T1-A uses a depletion type NPN structure, providing a low-noise and wide bandwidth. The device operates in an amplifying mode, with an output current of up to 10 mA. The device can be operated over a wide range of supply voltages, from 0.3 to 20 V. It also has a high gain-bandwidth product, enabling it to provide good performance in a wide range of circuit applications.

The NE68539-T1-A is intended for operation at frequencies ranging from DC to 3 GHz and can provide optimum performance up to 2.7 GHz. The device features a low-noise figure of 0.7 dB minimum and a gain of 10 dB minimum at a frequency of 1 GHz. The device can also operate at a wide temperature range from -55 to 150°C.

The NE68539-T1-A works by using a forward-biased collector-base junction as an amplifier. The base-emitter junction is reverse biased and is the input to the transistor. When voltage is applied to the base, it causes a current to flow from the base to the collector, which in turn causes a larger current to flow from the collector to the emitter. This amplified current is then used to drive other external devices.

The NE68539-T1-A is a great choice for RF applications that require a low-noise and low-current BJT. Its wide range of operation frequencies and high gain-bandwidth product make it ideal for many different types of applications, including communication devices and power amplifiers. In addition, its low-noise figure and wide temperature range make it well suited for high-sensitivity receivers. With the ability to operate with either ground or floating substrate and in single-ended or differential configurations, the NE68539-T1-A is an excellent choice for RF applications.

The specific data is subject to PDF, and the above content is for reference

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