NE685M13-A

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The NE685M13-A is a high frequency, compact textron transistor manufactured by PowerMat, a leading manufacturer of transistors and other components. It is designed for use in RF (Radio Frequency) circuits and is especially suitable for RF circuit applications in aerospace and military applications.

Overview

The NE685M13-A is a N-channel, Enhancement Mode Field Effect Transistor (FET) and is rated for up to 13A continuous or 15A peak collector current. It has a maximum drain-source voltage of 6.85 (Vds), and a maximum drain-source on-resistance of 0.14 ohms. It is a medium power, low noise FET, with good Class B performance for small audio and RF amplifiers.

Application Fields

The NE685M13-A is mainly used in RF (Radio Frequency) applications, such as radio receivers and transmitters, communication equipment, wireless LANs, and extremely low power applications like portable medical devices and computer peripherals.

It is also used in automotive applications as an amplifier and in power management systems where it is used as a switch or regulator. The NE685M13-A is suitable for use in automotive, aerospace and military environments, where its robustness and reliability makes it an ideal choice.

Working Principle

The NE685M13-A consists of a drain, a source and a gate. When the gate is given a positive voltage, the resistance between the source and the drain decreases, allowing a current to flow from source to drain. Since it is an n-type transistor, the flow of electrons from source to drain is blocked when the voltage given to the gate is negative.

The source and the drain of this transistor are connected through a thin band of conducting material, known as the channel. The width of this channel affects the resistance between the source and the drain. By changing the voltage given to the gate, the width of the channel can be varied, making the transistor effectively act like a variable resistor.

The NE685M13-A transistor can operate in either enhancement mode or depletion mode. In enhancement mode, the resistance between the source and the drain increases as the voltage given to the gate is increased. In depletion mode, the resistance between the source and the drain decreases as the voltage given to the gate is increased.

Conclusion

The NE685M13-A is an exemplary RF transistor from PowerMat. Its features make it an optimal choice for RF applications in aerospace, military, and automotive environments. Its working principle is based on the laws of electron flow and the concept of a variable resistor, whereby the width of the channel between the source and the drain can be varied by changing the gate voltage, thereby changing the resistance between the source and the drain.

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