NE687M33-A

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	3V
Frequency - Transition:	12GHz
Noise Figure (dB Typ @ f):	1.5dB ~ 2dB @ 2GHz
Gain:	--
Power - Max:	90mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 10mA, 1V
Current - Collector (Ic) (Max):	30mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-SMD, Flat Leads
Supplier Device Package:	3-SuperMiniMold (M33)
Base Part Number:	NE687

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The NE687M33-A is a high-performance RF transistor designed and manufactured by Fairchild Semiconductor. It is used in multiple applications, such as radio frequency (RF) amplifiers, radio receivers, and radio transmitters. This device is designed to operate in the VHF, UHF, and microwave frequency ranges, and is optimized for use in applications requiring high gain, stability, and wide bandwidth. The NE687M33-A has a single-stage, common-emitter configuration and is manufactured using bipolar n-p-n-type junction transistors (BJT). The NE687M33-A is a high performance transistor with a collector-emitter voltage rating of 30V, an operating temperature range from -55°C to +150°C, and a collector-emitter saturation voltage of 1.5V. It also has a high gain bandwidth product (GBWP) of 2.5GHz and an unmatched noise figure of 5.5dB. It is designed to be used with 50 ohm input and output circuits, and has an maximum RF input power rating of 10dBm.The NE687M33-A is ideal for use in RF amplifiers and radio communication systems, and is compatible with a variety of circuit topologies, such as amplifiers and oscillators. It is particularly well-suited for power-sensitive RF amplifier applications. It can be used in applications operating in VHF, UHF, and microwave frequency ranges, and its excellent linearity characteristics makes it ideal for RF transmitters. The NE687M33-A is capable of high voltage operation and is rated for a collector-emitter voltage of 30V. It is also capable of handling high frequency signals with lower distortion than many other transistors. Its on-chip frequency compensation further reduces distortion and provides a more linear response.The NE687M33-A features an improved common-emitter configuration which provides superior performance compared to other types of RF transistors. Its common-collector configuration allows for higher voltage operation and improved immunity to noise. Its low capacitance per unit of gain ensures better noise and distortion performance with minimal signal attenuation.The NE687M33-A\'s superior performance is further enhanced by its robust package. It is available in a convenient 2-pin, 3mm surface mount package, and its low profile allows for easy placement and attachment to PCBs. Its high power rating ensures reliable and consistent operation, even under extreme operating conditions.The NE687M33-A is an ideal device for a variety of RF amplifier and radio communication system applications. Its excellent performance characteristics and reliability make it an ideal choice for those applications requiring high gain, stability, and wide bandwidth. Its superior common-emitter configuration and robust package make it a perfect choice for use in demanding environments.

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