NE68519-A

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	6V
Frequency - Transition:	12GHz
Noise Figure (dB Typ @ f):	1.5dB @ 2GHz
Gain:	11dB
Power - Max:	125mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	75 @ 10mA, 3V
Current - Collector (Ic) (Max):	30mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-523
Supplier Device Package:	SOT-523
Base Part Number:	NE68519

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Introduction

NE68519-A is a bipolar radio frequency (RF) transistor, designed for use in high frequency applications for power amplification. The device has a self-aligning feature very well suited for inductive load applications. It was designed specifically for microwave communications systems, such as radio and satellite transmission, but can also be used in other electronic circuits.

Application Fields

NE68519-A has become a popular choice for use in high frequency electronics applications. It can be used in various wireless transmission systems such as GPS, cellular, WiMAX, RFID and other wireless communications systems. The device can also be used in general purpose power amplifiers. The device is particularly well suited for applications that require high power levels and efficiency. It can be used in amplifiers, oscillators and mixers, and has low noise characteristics, making it suitable for use in low noise applications. The device can also provide excellent gain control, making it suited for applications such as television transmitters and receivers.

Features

The NE68519-A is designed for optimal performance in high frequency applications. It has a library of low resistance and high performance package options with a wide range of inductance levels. It also features a self-aligning base. The device uses a 0.071 inch x 0.19 inch package, making it one of the smallest packages available for use in RF applications. The device also features a wide range of supply voltage, from 0.8V to 5.5V. Its output power ranges from 0.5W to 1W and its frequency range is up to 18GHz. In addition, it has high gain, low noise and excellent intermodulation distortion.

Working Principle

The NE68519-A uses an NPN bipolar structure. The device is driven by a DC voltage and works by taking advantage of the voltage drop on the collector of the transistor. This allows the transistor to amplify the incoming signal. The device is typically driven by a small signal source, such as a microphone or audio amplifier. The transistor amplifies the incoming signal, allowing it to be passed on to other parts of the circuit. This allows the device to be used in amplifiers and oscillators.

Conclusion

The NE68519-A is an excellent choice for use in applications requiring high frequency power amplification. It is designed for use in a wide range of applications, from wireless transmission systems to general purpose power amplifiers. The device features a wide range of supply voltage and frequencies, and provides excellent gain control. The device also has low noise characteristics, making it suitable for use in low noise applications. Finally, the device utilizes an NPN bipolar structure, allowing it to amplify incoming signals.

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