NE68133-T1B-R33-A

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NE68133-T1B-R33-A is a NPN bipolar silicon transistor in a plastic SMD package which can be used in a wide variety of application areas, including high frequency, radio frequency (RF), microwave, and high-power applications. The device features low noise, high gain and wide operating temperature range, making it suitable for many RF applications, such as Bluetooth technology and other wireless communication systems. It offers a very low ON resistance and an ultra-low collector-emitter saturation voltage for improved efficiencies. The device also offers reliable performance with high input and output power, making it ideal for a variety of applications.

The NE68133-T1B-R33-A is a surface mount device fabricated using low temperature co-fired ceramic (LTCC) technology. The LTCC technology provides a high-density package design, and helps to minimize thermal dissipation and improve device reliability. The LTCC material also has excellent electrical properties with low losses, making the NE68133-T1B-R33-A suitable for high-frequency applications. The device features a common base and emitter configuration, with an integrated DC collector-base bias network.

The NE68133-T1B-R33-A has a nominal operating frequency rating of 100 MHz and a recommended bias current of 2mA. The device also features an integrated RF band pass filter that provides a high degree of isolation between the input and output ports. The filter is composed of reactive LC elements, providing low pass-band and high pass-band frequencies for the device. The device\'s integrated filter helps ensure that only the desired signal frequencies are passed through the device and eliminates unwanted frequencies. This helps to optimize performance and improve signal integrity.

The device has a very low input capacitance of 175pF, which helps to minimize the loading effect on the source device, resulting in a higher gain. The voltage gain of the device is typically 15dB up to 400MHz, and is backed by a wide frequency response range of up to 5000MHz. The device also offers a very low noise figure of 0.5dB, which helps to reduce the distortion of the signal. The NE68133-T1B-R33-A is capable of functioning within an extended temperature range of -55°C to +150°C.

The NE68133-T1B-R33-A is an ideal device for a wide range of radio frequency applications. It offers a low output voltage saturation voltage, making it well suited for driving circuits with a wide dynamic range. The high frequency response, low noise figure and wide temperature range make it suitable for use in a variety of applications, including Bluetooth, remote control, and wireless applications. The integrated RF band pass filter ensures that only the desired signal frequencies are passed through the device and eliminates unwanted frequencies. The device is also suitable for use in high-power circuit where excellent power efficiency is desired.

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