NE687M13-A Allicdata Electronics
Allicdata Part #:

NE687M13-A-ND

Manufacturer Part#:

NE687M13-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: TRANSISTOR NPN 2GHZ M13
More Detail: RF Transistor NPN 3V 30mA 14GHz 90mW Surface Mount...
DataSheet: NE687M13-A datasheetNE687M13-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 2GHz
Gain: --
Power - Max: 90mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-3
Supplier Device Package: M13
Base Part Number: NE687
Description

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The NE687M13-A is a reliable, high-performance transistors that is often used in RF (radio frequency) applications. It is a bipolar (BJT) transistor and is available in a wide range of package types. Its high gain, frequency and power make it an ideal choice for RF applications. This article will discuss the application fields and working principle of the NE687M13-A.

Applications of the NE687M13-A

The NE687M13-A transistors are mainly used in RF applications. They are widely used in wireless communications such as Wi-Fi, Bluetooth, GPS, and so on. The NE687M13-A is also widely used in RFID (radio-frequency identification) systems, which are used to track goods, assets, and personnel. Furthermore, the NE687M13-A is used in aerospace and defense applications where reliable and high-performance RF transistors are needed. Some of its applications include communication, radar, navigation and telemetry.

Working Principle of the NE687M13-A

The NE687M13-A is a bipolar transistor that operates with a base current. The transistor has two PN junctions, one between the base and the emitter, and one between the base and the collector. When the base is biased, current flows between the two junctions, resulting in the amplification of the signal. The collector current of the NE687M13-A can reach up to 687mA while has a high reverse transfer capacitance of 15pF. The device has a high gain, frequency and power, making it an ideal choice for RF applications.

Conclusion

The NE687M13-A is a reliable, high-performance RF transistor that is widely used in a variety of applications. Its high gain, frequency and power make it an ideal choice for RF applications. This article has discussed the application fields and working principle of the NE687M13-A and showed that it is capable of providing reliable, high-performance solutions to a range of RF applications.

The specific data is subject to PDF, and the above content is for reference

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