NE687M03-A

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The NE687M03-A is an RF bipolar junction transistor (BJT) designed for high frequency and high power applications. The NE687M03-A is a great option when looking for a reliable and efficient RF BJT. It offers excellent performance, with low noise and high power, making it suitable for a wide range of applications.

Features

• Low Noise Figure – The NE687M03-A has an extremely low noise figure, typically 0.4 dB or better at 1 GHz.
• High Gain – The NE687M03-A typically offers gains of 10 dB or more from 0.1 to 3 GHz.
• High Efficiency – The NE687M03-A has an efficiency of more than 50%, making it an efficient RF BJT.
• High Power – The NE687M03-A typically offers power levels of up to 50 W from 0.1 to 3 GHz.
• Broadband Performance – The NE687M03-A offers broadband performance with excellent gain and low noise figure.

Applications

The NE687M03-A is ideal for a wide range of applications as it offers excellent performance, low noise and high power. These applications include radar systems, automotive communications, satellite communications, high speed data links and wireless base stations. It is also suitable for high frequency amplifiers, oscillators, mixers and RF power amplifiers.

Working Principle

The NE687M03-A is a bipolar junction transistor (BJT) that operates by allowing a small current between the base and the collector of the transistor. When a positive voltage is applied to the base, the electrons flow from the base to the collector, creating a flow of current from the collector to the emitter. This current flow can then be harnessed to create an amplified signal. BJTs can be used in both analog and digital circuits, and are often used for amplifiers and oscillators.

Conclusion

The NE687M03-A is a reliable and efficient RF bipolar junction transistor (BJT) designed for high frequency and high power applications. It offers excellent performance, with low noise and high power, making it suitable for a wide range of applications such as radar systems, automotive communications, satellite communications, high speed data links and wireless base stations.The NE687M03-A operates by allowing a small current between the base and the collector of the transistor and this current flow can then be harnessed to create an amplified signal.

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