NE685M03-A Allicdata Electronics
Allicdata Part #:

NE685M03-A-ND

Manufacturer Part#:

NE685M03-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: TRANSISTOR NPN 2GHZ M03
More Detail: RF Transistor NPN 5V 30mA 12GHz 125mW Surface Moun...
DataSheet: NE685M03-A datasheetNE685M03-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
Gain: --
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-623F
Supplier Device Package: M03
Base Part Number: NE685
Description

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The NE685M03-A transistor is one of the most popular RF transistors available today. It is a bipolar junction transistor (BJT) and it is a part of the N-channel MOSFET family. This device was first introduced by National Semiconductor (now known as Texas Instruments) in 1990 and has since become a widely used transistor for radio frequency (RF) applications.

The NE685M03-A is a small-signal transistor designed for low-noise, medium-power and low-voltage applications. This device is ideal for use in high-frequency switching, amplification, and electronic circuits where low power consumption and low noise are required. It is also suited for use in RF applications such as cellular telephones, two-way radio systems, and wireless LANs.

The NE685M03-A can be used as a driver of both digital and analog signals. It has a wide gain range of 200 to 2000, making it suitable for a variety of applications. Its low noise performance makes it ideal for RF applications where high signal-to-noise ratios are essential. In addition, the device is capable of operating at frequencies up to 500 MHz, making it suitable for use in cellular and other wireless applications.

The NE685M03-A transistor works using a bipolar junction injection process. In this process, electric current is converted into an electromotive force (EMF), which is responsible for the movement of charge carriers. The transistor is composed of two PN-type diodes. The collector and emitter terminals form the junction of the two diodes, while the base terminal acts as the control element.

The NE685M03-A is a current gain device, meaning it has a low input current but produces a higher output current. The device works by allowing current to flow between the collector and emitter terminals when a voltage is applied to the base. The amount of current flowing through the device is determined by the amount of base current applied. The gain of the transistor is determined by the ratio between the collector current and the base current.

The NE685M03-A transistor is well-suited for use in medium-power and low-voltage applications. It is well-suited for use in digital and analog applications, as well as RF applications. Additionally, the transistor provides low-noise performance and operates at high frequencies, making it suitable for use in wireless applications. Additionally, it has a wide gain range, making it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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