NE68830-T1-A Allicdata Electronics
Allicdata Part #:

NE68830-T1-A-ND

Manufacturer Part#:

NE68830-T1-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: TRANS NPN 2GHZ SOT-323
More Detail: RF Transistor NPN 6V 100mA 4.5GHz 150mW Surface Mo...
DataSheet: NE68830-T1-A datasheetNE68830-T1-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz
Gain: --
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

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NE68830-T1-A is a type of transistors in the Bipolar Junction Transistor (BJT) and Radio Frequency (RF) family. This device is very versatile and can be used in a variety of applications, depending on its characteristics. This article will provide an overview of the NE68830-T1-A\'s application fields and working principle.

The RF Transistor family, which includes the NE68830-T1-A, is specifically designed for radio frequency signals. This type of transistor is commonly used in radio transmitters and receivers, as well as in mobile phones, cordless phones, and Wi-Fi. The key benefit of using an RF transistor is that it is designed to amplify signals in the radio frequencies. The NE68830-T1-A has a maximum frequency of about 1 GHz and its wide frequency range makes it suitable for a variety of applications.

The NE68830-T1-A is a very versatile transistor and it is used in many different applications. In terms of amplification, the NE68830-T1-A can be used to amplify audio signals, RF signals, and video signals. In addition, the NE68830-T1-A can also be used in digital systems, such as modems, digital TV receivers, and digital radio broadcasting systems.

The NE68830-T1-A also has a range of other applications. It is often used to amplify power supplies in order to increase their efficiency. The NE68830-T1-A can also be used to regulate and switch current, voltage, and power in power supplies. In addition, it can also be used to control the speed of DC motors and to implement various logic functions.

The working principle of the NE68830-T1-A is based on the same principles as other BJT transistors. The transistor is made up of three layers: the base, the collector, and the emitter. The base is connected to a control voltage, which allows the current from the collector and the emitter to flow. When the base voltage is increased, the collector current increases and the transistor enters a switch or amplifier stage, depending on its characteristics.

The NE68830-T1-A has a wide variety of characteristics, which allow it to be used for many different applications. In terms of its power handling capabilities, the NE68830-T1-A has a maximum power of 1.5W. Its high breakdown voltage makes it suitable for power amplifiers and it has a low saturation voltage, which makes it suitable for switching applications. In addition, the NE68830-T1-A has a wide range of frequency response, allowing it to be used in radio frequency applications.

The NE68830-T1-A is an extremely versatile transistor and can be used for many different applications. Its wide frequency response and power handling capabilities make it suitable for a variety of RF applications and for control logic applications. Its low saturation voltage allows it to be used for switching applications, and its high breakdown voltage makes it suitable for power amplifiers. The NE68830-T1-A is a powerful component and it is one of the most versatile transistors available.

The specific data is subject to PDF, and the above content is for reference

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