NE68133-T1B-R34-A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NE68133-T1B-R34-A is a high-frequency transistor. It is a type of transistor that can operate at radio frequencies. It is an N-channel E-mode field-effect transistor (FET) which offers high gain and steep slope characteristics over a wide frequency range from 3GHz to 6GHz.

This transistor is part of a family of bipolar junction transistors (BJT), a type of transistor which comprises two pn-junctions that are formed between three different layers of semiconductor materials. They are also known as bipolar transistors and are commonly used in power amplifiers and in high-frequency amplifier circuits. BJTs are similar to field effect transistors (FETs) in the sense that they use an external electric field to control their operation. Unlike FETs, BJTs are operated with an external voltage applied to their terminals to create an electric field within the structure.

The NE68133-T1B-R34-A transistor is typically used in radio frequency (RF) circuits. It is suitable for use in applications such as satellite amplifiers, high power amplifiers, broadband amplifiers, wideband amplifier circuits, high gain linear amplifiers and low noise amplifiers. It is also used in radar circuits, receivers, transmitters and other high frequency applications.

The working principle of the NE68133-T1B-R34-A transistor is based on the application of an electric field to the gate terminal. When the voltage applied to the gate is positive, the transistor becomes “on” and current flows from the source to the drain. Conversely, when the voltage on the gate is negative, the transistor becomes “off” and no current flows.

This transistor has a high maximum current rating. It operates at an operating frequency range of 3GHz to 6GHz and has a maximum collector current of 3.5 amps. It also has a maximum power dissipation rating of 65 watts and a maximum drain-source voltage of 45 volts. Its high gain characteristics make it ideal for low noise amplifiers, power amplifiers and radar circuits.

The NE68133-T1B-R34-A transistor is a cost-effective and reliable device for radio frequency applications. It offers excellent gain and power output characteristics over a wide range of frequencies, making it ideal for high-power amplifier designs and narrowband applications. Its low noise characteristic makes it an ideal choice for low noise amplifiers and local oscillators.

The specific data is subject to PDF, and the above content is for reference