Allicdata Part #: | NE685M03-T1-A-ND |
Manufacturer Part#: |
NE685M03-T1-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | TRANSISTOR NPN 2GHZ M03 |
More Detail: | RF Transistor NPN 5V 30mA 12GHz 125mW Surface Moun... |
DataSheet: | NE685M03-T1-A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 5V |
Frequency - Transition: | 12GHz |
Noise Figure (dB Typ @ f): | 1.5dB ~ 2.5dB @ 2GHz |
Gain: | -- |
Power - Max: | 125mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 75 @ 10mA, 3V |
Current - Collector (Ic) (Max): | 30mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-623F |
Supplier Device Package: | M03 |
Base Part Number: | NE685 |
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The NE685M03-T1-A is a superminiature NPN transistor designed for use in radio frequency applications. It is known for its excellent gain and high performance in high frequency applications. The NE685M03-T1-A is a general purpose RF transistor that is ideal for use in amplifiers and receivers. In its basic form, the transistor is an NPN monolithic transistor with a single emitter, collector, base and a maximum collector current of 15 mA.
The NE685M03-T1-A is constructed with three NPN PNP transistors, which are connected in series. This configuration allows current to flow through the circuit with minimal resistive losses. The transistors are then connected in parallel to form a single three-way circuit with the emitter, collector, and base electrodes. This three-way circuit is commonly referred to as a “ Darlington” circuit.
The NE685M03-T1-A has a low noise figure, which is an important factor in obtaining good performance. This feature enables the transistor to be used in applications where noise must be kept to a minimum. The NE685M03-T1-A has an operating frequency range of 3kHz to 140MHz, which makes it well suited for a variety of RF applications. The maximum power dissipation is 150mW.
The working principle of the NE685M03-T1-A is the same as that of a traditional three bipolar transistor Darlington circuit. The base of one transistor is connected to the collector of the other, and the collector of one is connected to the base of the other. The emitter of each transistor is connected together. When a small current passes through the base of one of the transistors, a larger current will pass through the emitter and collector of both transistors. This larger current is then used to generate the output current of the circuit.
The NE685M03-T1-A has a wide range of applications, primarily in radio frequency applications. This transistor can be used in radio transmitters, radio receivers, amplifiers, and other radio frequency circuits. It is also used in audio frequency amplifiers, television tuners, modulators, and other audio frequency circuits. The NE685M03-T1-A can also be used in applications such as optical isolators, motor control circuits, active filters, and low-noise amplifiers.
In conclusion, the NE685M03-T1-A is a general purpose NPN transistor designed for use in radio frequency and audio frequency applications. Its low noise figure makes it well suited for many applications where noise must be kept to a minimum. Its wide operating frequency range and high power dissipation make it an ideal choice for many RF and audio frequency circuits.
The specific data is subject to PDF, and the above content is for reference
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NE68030-T1-A | CEL | 0.0 $ | 1000 | RF TRANSISTOR NPN SOT-323... |
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NE68130-T1-A | CEL | -- | 1000 | RF TRANSISTOR NPN SOT-323... |
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