
Allicdata Part #: | NTD4302-1G-ND |
Manufacturer Part#: |
NTD4302-1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 8.4A IPAK |
More Detail: | N-Channel 30V 8.4A (Ta), 68A (Tc) 1.04W (Ta), 75W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.04W (Ta), 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 24V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.4A (Ta), 68A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTD4302-1G is a type of Field Effect Transistor (FET) device known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a single transistor device with a single gate terminal. The NTD4302-1G is suitable for a variety of applications, and can be used in many circuits, including motor control, voltage regulation, digital logic circuits, and power supply circuitry.
FETs, such as the NTD4302-1G, work by modulating the flow of electrons between two terminals in a circuit.The gate terminal acts as an on/off switch for the flow of electrons and is used to control the current in the circuit. When a positive potential is applied to the gate terminal, electrons are allowed to flow freely between the drain and the source terminals, creating an on state. When the gate voltage is zero, the flow of electrons is stopped, producing an off state.
The NTD4302-1G is a low voltage MOSFET, suitable for use in applications where the supply voltage is between 0-3.3V. It is capable of conducting high current levels up to 30A, and has a maximum drain-source voltage of 100V. It is also very fast switching, with a typical switching time of only a few nanoseconds. The NTD4302-1G is also tolerant to both ESD (electrostatic discharge) and EMI (electromagnetic interference). This makes it an ideal choice for many applications where robustness is required.
The NTD4302-1G is most often used for power regulation and motor control applications. In a power regulation circuit,the NTD4302-1G is used to convert a low voltage input into a higher voltage output. This is often used in battery powered devices, where a low voltage battery is used to electrically drive a higher voltage motor. The NTD4302-1G is also used to control the speed of motors in applications such as remote control cars and robots.
Another useful application of the NTD4302-1G is in digital logic circuits. In this type of circuit, the device is used to control the output of a logic circuit or to enable or disable a particular logic path. The NTD4302-1G is ideal for this type of application as it can be easily switched between low and high levels to control the output of the circuit.
The NTD4302-1G is also used in power supply circuitry. It is used to regulate the output voltage of a power supply in order to maintain a constant voltage for any connected device. This ensures that the connected device operates correctly and does not suffer from fluctuating voltage levels. The NTD4302-1G is also used to switch between different power supplies in order to select the most appropriate source of power.
The NTD4302-1G is a versatile and reliable FET device that is suitable for a wide range of applications. Its low voltage operation, fast switching times, and robust construction make it an ideal choice for many circuit designs. This device is capable of handling high current levels, making it ideal for power regulation, motor control, and digital logic applications.
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