NTD4860N-35G

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-251-3 Stub Leads, IPak
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.28W (Ta), 50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1308pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	16.5nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	7.5 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	10.4A (Ta), 65A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The NTD4860N-35G transistor is an N-Channel MOSFET which is used in many types of integrated circuits, especially in applications requiring high-performance. This is an important type of FETs and MOSFETs that are used in various types of practical applications. In this article, we will discuss the application field and working principle of the NTD4860N-35G transistor. The NTD4860N-35G transistor belongs to the N-Channel MOSFET family and is basically a type of field-effect transistor (FET). It is basically a voltage-controlled semiconductor device that is made up of four layers of semiconductor materials. The transistor is usually constructed using a gate electrode, source and drain electrodes. The source and drain electrodes are made of two types of doped materials while the gate electrode is made using a third type of material known as an oxide layer.The NTD4860N-35G is specifically designed for low-voltage applications, such as power control, low-frequency switching, and amplifiers. It has a high gain, low voltage drop, and low driving power consumption. The NTD4860N-35G has a saturation Drain-Source Voltage of < 3.3V making it suitable for low-voltage electronic applications. The turn-on voltage (VGS) for this transistor is -4.5V, with a maximum Drain-Source voltage of 20V. It has a maximum drain current of 4A and a switch resistance of 0.004ohms.The working principle of the NTD4860N-35G transistor is based on the common MOSFET principle. When the transistor is off, most of the current flows through the transistor’s channel. The channel is formed by negative electrons available in the source region. This allows the inverting device to remain off and no current can be observed through the drain. When voltage is applied to the gate, the electrons are attracted and begin to accumulate in the transistor channel. This process increases the field concentration. Due to the increased electric field, the channel resistance decreases allowing the current to flow through the source-drain pathway.In summary, the NTD4860N-35G is an N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor that is used in low-voltage applications. It has a low voltage drop, high gain, and low driving power consumption. The voltage at the gate controls the current that flows through the transistor. The transistor is ideally suited for applications such as power control, low-frequency switching, and amplifiers.

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