Allicdata Part #: | NTD4905N-1G-ND |
Manufacturer Part#: |
NTD4905N-1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 67A SGL IPAK |
More Detail: | N-Channel 30V 12A (Ta), 67A (Tc) 1.4W (Ta), 44W (T... |
DataSheet: | NTD4905N-1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta), 44W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2340pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta), 67A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NTD4905N-1G is a silicon N-channel enhancement-mode MOSFET that is a popular choice for many applications. This device is easy to use and provides fast switching and higher breakdown voltage than other MOSFETs in its class. This makes it ideal for use in many types of electronics applications.
The main application fields of NTD4905N-1G are logic level circuits, small power switching applications, USB switch interfaces, automotive infotainment systems and high current DC motors drives. It can also be used as an inverter circuit for driving electrical loads. It is suitable for many kinds of portable electronics and other consumer appliance control.
In order to understand the working principle of NTD4905N-1G, it is important to understand the basic MOSFET technology. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor, and it is a three terminal device which consists of three layers of semiconductor materials separated by two sets of Oxide layers. The two sets of Oxide layers form the Gate terminal, while the Source and Drain terminals make up the two outer layers of the device. When a voltage is applied to the Gate terminal, it creates a small electric field that allows electrons to flow between the Source and Drain terminals - effectively controlling the current that flows through the device.
NTD4905N-1G utilizes an advanced MOSFET design which allows the device to provide higher breakdown voltage and faster switching than other MOSFETs in its class. This improved device provides superior on and off state performance, and is also capable of providing high current-carrying capacity and excellent immunity to radiation.
NTD4905N-1G operates in enhancement mode, which is a type of MOSFET device where a small voltage applied to the Gate terminal will turn the device on and allow current to flow between the Source and Drain terminals. In order to turn the device off, a larger voltage must be applied to the Gate terminal. This type of MOSFET is ideal for many types of applications since it has low power dissipation and is capable of switching high current loads quickly.
Overall, the NTD4905N-1G is a highly versatile MOSFET which is capable of providing superior performance in many types of electronic applications. It is easy to use, and its low power dissipation and fast switching make it ideal for use in logic level circuits, small power switching applications, USB switch interfaces, automotive infotainment systems, and high current DC motors drives.
The specific data is subject to PDF, and the above content is for reference
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