Allicdata Part #: | NTD40N03RT4OSTR-ND |
Manufacturer Part#: |
NTD40N03RT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 7.8A DPAK |
More Detail: | N-Channel 25V 7.8A (Ta), 32A (Tc) 1.5W (Ta), 50W (... |
DataSheet: | NTD40N03RT4 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 584pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 5.78nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 16.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.8A (Ta), 32A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTD40N03RT4 is a type of a MOSFET (metal-oxide-semiconductor field-effect transistor) that comes from a large family of such devices. It is a single MOSFET and is used for a wide range of switching and amplifier applications in circuits. MOSFETs are different from other transistors, such as bipolar junction transistors, in that instead of controlling the current by changing the base-emitter voltage, the current is regulated by the voltage on its gate terminal.
Application Field
NTD40N03RT4 has wide applications in circuits, particularly when flexibility and tight control of the current is needed. Since MOSFETs require little input energy, they are particularly useful in applications such as motor drivers, where the driving power of the chip needs to be very high. Also, they are frequently used in analog and digital circuits where their fast switching speed is an advantage.
NTD40N03RT4 is also used in digital and analog circuits that require noise control as its switching reduces emissions, kind of insulation it offers and noise suppression. NTD40N03RT4 is used to switch between a higher voltage and a lower voltage, which usually consists of connecting the MOSFET between the two voltages.
Working Principle
The working principle of a MOSFET is that it is a voltage-controlled transistor and requires very little current to control the flow of current through it. The gate terminal of a MOSFET is an insulated metal gate, which is completely insulated from the channel. When a positive voltage is applied on the gate terminal, the electric field causes the thin rectangular channel to have an extra charge, which attracts the electrons and forms an inversion channel.
The extra charge attracts the electrons into the channel, and the channel with electron majority (n-channel) will then include individual charge carriers. The MOSFET allows the current to flow through the channel, making the channel behave like a resistor. The current can be controlled by changing the voltage on the gate terminal. This will create a larger or smaller electric field which will change the length of the inversion channel and how much current is permitted to flow.
Conclusion
NTD40N03RT4 is a powerful MOSFET device and can be used for a wide range of applications. It is particularly useful in applications where there are low voltage requirements and tight control of current is needed. With its excellent noise control and insulation capabilities, it is an excellent choice for a variety of switching and amplifier tasks. With the understanding of how a MOSFET functions, it is clear that NTD40N03RT4 is a cutting-edge device and highly suitable for demanding tasks.
The specific data is subject to PDF, and the above content is for reference
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