NTD4813NH-35G

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The NTD4813NH-35G is an Enhancement Mode, high-speed power MOSFET, specifically designed to minimize switching losses. This MOSFET features ultra-low Qg, low-RDS(on) and high-frequency capabilities, offering a significant improvement in performance when compared to other, similarly-sized MOSFETs.

The NTD4813NH-35G provides an excellemnt choice for power supplies, DC/DC converters, solar inverters, and other applications that require an enhancement mode MOSFET. The NTD4813NH-35G is an excellent choice for high-speed switched circuit, high-current switching applications.

Product Overview

The NTD4813NH-35G is a high-speed MOSFET designed to be used in power switching, motor control and high-current applications. This MOSFET is built using a low-threshold voltage EPDM-like gate structure and advanced packaging technology, allowing a wide range of operating temperatures and automatic gate protection.

The NTD4813NH-35G is available in both through-hole and surface mount packages. It has a very low RDS(on) at 4.0 mΩ and a maximum operating voltage of 85 V. It also features a maximum continuous drain current of 35 A.

Application Field

The NTD4813NH-35G is ideal for high-frequency power supply applications such as DC/DC converters, solar inverters, and power switching applications. It also has excellent thermal resistance properties and high-frequency capabilities, making it an ideal choice for driving high power motors or for any other application that needs to switch large amounts of power with very low losses.

The NTD4813NH-35G is also suitable for use in hybrid electric vehicles (HEVs) and electric vehicles (EVs), where its low RDS(on) and low-threshold voltage enable high-efficiency power switching. Additionally, this MOSFET also offers excellent protection against overvoltage and reverse bias conditions.

Working Principle

The NTD4813NH-35G is an enhancement mode MOSFET, which means that it requires an external voltage source to operate. When a voltage is applied to its Gate, the Gate is pulled up, which in turn reduces the resistance between the Drain and Source. This reduces the amount of current that is required to flow through the MOSFET, reducing power losses and enabling high-speed switching.

The NTD4813NH-35G also features a unique advanced packaging technology, which enables excellent thermal resistance, enabling operation in extremely high temperature environments. This allows for higher power rating and faster switching speeds.

The NTD4813NH-35G also features protection against reverse bias, making it ideal for use in applications where reverse current flow is a possibility. This protection helps prevent damage to the MOSFET and ensures that it continues to operate as expected.

Conclusion

The NTD4813NH-35G is an excellent choice for high speed, high power applications such as power supplies, DC/DC converters and solar inverters. It features low Qg, low RDS(on) and excellent thermal resistance properties, allowing for higher power ratings and faster switching speeds. Additionally, its advanced packaging technology provides protection against reverse bias conditions, making it ideal for use in hybrid and electric vehicles.

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