NTD4858NA-1G

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.3W (Ta), 54.5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1563pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:	19.2nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	6.2 mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C:	11.2A (Ta), 73A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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NTD4858NA-1G is a N-Channel MOSFET transistor, developed by NTD(National Taiwan University). It is a compact, high-current transistor which can be used in various applications, such as high current switching, driving motors and power management.This device is based on the construction of a MOSFET: Metal Oxide Semiconductor Field Effect Transistor. It is a three terminal field effect transistor, composed of a source, gate and drain. In order to induce current in the transistor, gate voltage must be applied. This voltage is used to control the flow of electrons between the source and the drain, which are separated by a thin insulation layer.The NTD4858NA-1G is specifically designed for use in high-current applications. Its drain current is up to a maximum of 48A at 25℃ and from -55℃ to +150℃. The maximum voltage it can handle is 100V. Its drain to source breakdown voltage is rated at 100V, and its on-resistance is rated at 1.8 mΩ. Its gate threshold voltage, which is the gate voltage needed to turn on the transistor, is 4.5V with a gate capacitance of 177pF at 4.5V. All these specifications make it an ideal device for applications in switching, drive motors and power management.In terms of application field, the NTD4858NA-1G is mainly used in motor switching applications and high current switching applications. It is suitable for applications in robotics, medical electronics and power management. It has a wide range of input voltage from 4.5V to 100V. This feature makes it suitable for applications that involve connecting to different kinds of power supplies and voltages.In terms of working principle, the NTD4858NA-1G uses a MOSFET based construction. It consists of three terminals: gate, source and drain. The gate is connected to the voltage source and is used to control the flow of current between the source and drain. The source and the drain are separated by a thin insulation layer. When a voltage is applied to the gate, electrons are pulled from the source to the drain, completing the conduction path. This enables the control and regulation of current flow depending on the applied gate voltage. Overall, the NTD4858NA-1G is an ideal device to use in high current switching applications and in motor driving applications. It is compact and is rated for operation at temperatures ranging from -55℃ to +150℃, making it suitable for movable and mobile applications. It has a wide input voltage range, enabling the device to be connected to different types of power supplies and voltages. Finally, its integrated MOSFET construction provides efficient switching with fast switching speed and high current capability, making it ideal for use in current controlling and high current switching.

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