Allicdata Part #: | NTD4979NT4G-ND |
Manufacturer Part#: |
NTD4979NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 9.4A DPAK-3 |
More Detail: | N-Channel 30V 9.4A (Ta), 41A (Tc) 1.38W (Ta), 26.3... |
DataSheet: | NTD4979NT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.38W (Ta), 26.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 837pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.4A (Ta), 41A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTD4979NT4G is a general purpose N-channel MOSFETs that is developed by ON Semiconductor. It is specifically designed to minimize the power consumption of the system while providing high performance switch or amplifier functions. In this article, the application field and working principle of the NTD4979NT4G will be discussed.
Application Field
General purpose switch - NTD4979NT4G is mainly used as a general purpose switch. Its low on-resistance, low gate-source threshold, and low gate bias make it well suited for switching column drivers, power line switching, and other general purpose applications. In addition, its high level of reliability makes it an ideal choice for critical applications.
Power amplifier – The NTD4979NT4G can also be used as a power amplifier. Its high output power capability and low on-resistance make it well suited for use in RF power amplifiers, audio power amplifiers, and other power amplifier applications.
Low voltage applications – The NTD4979NT4G can also be used in low voltage applications. Its low on-resistance and low gate-source threshold make it an ideal choice for use in low voltage control circuits and other low voltage applications.
Working Principle
The NTD4979NT4G is a N-channel MOSFET. Unlike other transistors such as BJTs, MOSFETS do not rely on minority carrier injection to control current. Instead, they rely on a thin conducting channel that forms between the drain and source when a particular voltage is applied to the gate electrode.
The NTD4979NT4G is designed to minimize the power consumption when operated. To do this, it uses a low on-resistance value and a low gate-source threshold voltage. This allows the gate voltage to remain low for the majority of operation. This in turn reduces the power required to keep the channel open and reduces the total power required for the operation of the MOSFET.
The NTD4979NT4G also uses a high level of reliability, making it well-suited for critical applications. It also has a wide range of operating voltages and can be used in applications with a wide range of supply voltages.
Conclusion
The NTD4979NT4G is a general purpose N-channel MOSFET developed by ON Semiconductor. It is mainly used as a general purpose switch, a power amplifier, or in low voltage applications. It is designed to minimize the power consumption while providing high performance functions. Its low on-resistance, low gate-source threshold, and high reliability make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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