Allicdata Part #: | NTD4960N-35GOS-ND |
Manufacturer Part#: |
NTD4960N-35G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 11.1A IPAK |
More Detail: | N-Channel 30V 8.9A (Ta), 55A (Tc) 1.07W (Ta), 35.7... |
DataSheet: | NTD4960N-35G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.07W (Ta), 35.71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.9A (Ta), 55A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NTD4960N-35G is a type of field-effect transistor (FET). It is a single, high-voltage N-channel MOSFET (Metal Oxide Semiconductor FET), which is often used in high-power applications. This particular transistor features a drain and source voltage rating from 20V to 600V and a drain current rating from 30A to 80A. This is ideal for applications where high voltage and large current are required. In addition, the threshold voltage is only 1V and the gate drive power supply operates from 7V to 20V.
A FET is a type of transistor. It operates on an electric field, which allows current to flow between the source and drain terminals. The electric field is created when a voltage is applied between the gate and the source. The electric field modulates the conductivity of the channel region between the source and the drain, so that the channel can be opened and closed. This type of operation allows the FET to act as an electronic switch, which can be used to control the flow of current in an electronic circuit. It is often used in switching circuits and in digital electronic systems.
NTD4960N-35G is a type of N-channel MOSFET. This type of transistor features two terminals, the drain and the source. It works by allowing current to flow from source to drain when a voltage is applied to the gate terminal. The gate is insulated from the drain and source, so it can act as an electronic switch. When a voltage is applied to the gate, an electric field is created, which affects the conductivity of the channel between the source and the drain. This allows for current to flow from the source to the drain, depending on the applied gate voltage.
NTD4960N-35G is used in a variety of high-power applications where high voltage and large current are required. It is commonly used in switching power supplies, battery chargers, and power converters, as well as in high voltage, high frequency switching applications. The low threshold voltage and high voltage rating of this particular transistor make it an ideal choice for high power applications. It can also be used in audio amplifiers, RF transmitters, and other high-frequency digital signal processing applications.
NTD4960N-35G has a wide range of uses and is a good choice for applications requiring high power and high voltage. It is reliable and easy to use, making it a popular choice for high-power applications. It is important to choose the right type of FET for the application and to follow the manufacturer’s instructions for proper usage.
The specific data is subject to PDF, and the above content is for reference
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