NTD4963NT4G Allicdata Electronics

NTD4963NT4G Discrete Semiconductor Products

Allicdata Part #:

NTD4963NT4GOSTR-ND

Manufacturer Part#:

NTD4963NT4G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 8.1A DPAK
More Detail: N-Channel 30V 8.1A (Ta), 44A (Tc) 1.1W (Ta), 35.7W...
DataSheet: NTD4963NT4G datasheetNTD4963NT4G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.1W (Ta), 35.7W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16.2nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 44A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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A NTD4963NT4G is a type of field-effect transistor (FET) used in electronics. FETs are active semiconductor devices used to switch or control the flow of electric current in a circuit. A NTD4963NT4G is a single gate, N-channel MOSFET. MOSFET stands for Metal-Oxide-Semiconductor FET and is the most commonly used type of FET today. It is also known as an insulated-gate FET because the gate of the device is insulated from the main current carrying channel by a thin layer of insulating material such as silicon dioxide.

The NTD4963NT4G has a maximum continuous drain current of 4 A, a maximum drain source voltage (Vdss) of 60 V, and a maximum gate source voltage (Vgss) of 20 V. It is commonly used as an on/off switch for high current applications such as motor control, digital logic control, and switching of loads such as LEDs. These devices operate on the principle of an electric field created by the voltage applied to the gate influencing the conductivity of the channel between the source and drain terminals of the device.

This electric field effect arises because of voltage induced charge deposition on the oxide interface which induces a potential difference between the gate and the channel. By increasing the gate voltage, the electric field can increase and cause a decrease in the resistance of the channel. This causes an increase in the flow of current which is then controlled by the gate voltage. When the voltage is below the threshold voltage, the channel has very high resistance or is completely switched off.

The NTD4963NT4G is a popular choice for applications where higher current is needed such as motor control, digital logic control, and switching of loads such as LEDs. It is also used for load switching and power supply control circuit, along with various other analog and digital logic applications. The device is available in through-hole, surface-mount, and other packages and can be used in a variety of voltage and current conditions depending on the application.

In summary, the NTD4963NT4G is a single gate, N-channel MOSFET which is primarily used as an on/off switch in applications such as motor control, digital logic control, and switching of loads such as LEDs. It is known for its high current handling capabilities and is available in through-hole, surface-mount, and other packages. It operates on the electric field effect principle with an electric field created by a gate voltage which influences the conductivity of the channel between the source and drain terminals.

The specific data is subject to PDF, and the above content is for reference

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