
NTD4969NT4G Discrete Semiconductor Products |
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Allicdata Part #: | NTD4969NT4GOSTR-ND |
Manufacturer Part#: |
NTD4969NT4G |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 41A DPAK |
More Detail: | N-Channel 30V 9.4A (Ta), 41A (Tc) 1.38W (Ta), 26.3... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.14206 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.38W (Ta), 26.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 837pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.4A (Ta), 41A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTD4969NT4G field effect transistor is an MOSFET single device that offers excellent performance. It is designed specifically for high-power applications, such as motor and power control, where high performance is essential. The device\'s structure and design provide high current and voltage capability, as well as effective thermal performance.
The NTD4969NT4G has a voltage rating of 100V, a power rating of 2W and is capable of switching currents of approximately 3A. It is suitable for use in a wide range of applications, including power regulation, lightning protection, variable speed motors, and UPS systems. The device also features a thermal shut off feature, which protects the device from overheating.
The structure and operation of the NTD4969NT4G are based on the FET (field-effect transistor) design, which uses an insulated gate to control the voltage across the source and drain of the device. The source-drain current is controlled by the gate voltage, which creates an electric field between them. This electric field causes the current between the source and the drain to increase or decrease depending on the polarity of the voltage applied to the gate.
The NTD4969NT4G MOSFET has a low on-resistance, meaning it is able to switch faster and the current required to switch it is lower than other transistors of the same size. Its low gate capacitance reduces the time necessary to switch the gate voltage, making it possible to reduce the switching losses. This makes the NTD4969NT4G a great choice for applications that require high-speed and low power consumption.
The NTD4969NT4G is very reliable in operation and has been proven to perform well for long periods of time. It features a unique self-protection circuit that helps ensure longer device life. This circuit prevents the device from overloading or overstressing, which can cause damage. It also prevents excessive current from flowing through the MOSFET and helps to reduce power dissipation.
The NTD4969NT4G is a great choice for many different types of applications. It is a reliable, efficient, and powerful device, and is well-suited for high-power applications that require speed and precision. With its excellent performance and reliability, the NTD4969NT4G is an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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