Allicdata Part #: | NTD4858NAT4G-ND |
Manufacturer Part#: |
NTD4858NAT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 11.2A DPAK |
More Detail: | N-Channel 25V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5... |
DataSheet: | NTD4858NAT4G Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta), 54.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1563pF @ 12V |
Gate Charge (Qg) (Max) @ Vgs: | 19.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.2 mOhm @ 30A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.2A (Ta), 73A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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Introduction
The NTD4858NAT4G is an N-Channel Enhancement Mode MOSFET. It offers the designer an interesting alternative to the regular 2-terminal MOSFETs. This device is a fully integrated four-terminal switch with a high input impedance and low output terminal resistance. It offers high switching speed and excellent thermal performance while providing superior operational flexibility. It is designed to support high-temperature, high-performance environments.Features
The NTD4858NAT4G offers several advantages over regular 2-terminal MOSFETs. Here are some of the most important features of this device:- High input impedance and low output terminal resistance
- Low leakage current
- Low input and output capacitance
- High switching speed
- Excellent thermal performance
- Soft switching capability
- Compact and lightweight design
Application Fields
The NTD4858NAT4G is well suited for a variety of applications. It is mainly targeted for pulse-width-modulated (PWM) motor control applications. It can be used in consumer power solutions such as power supply circuits, battery charge controllers, automotive electronic systems, telecommunication, and industrial control systems. It can also be used in consumer electronics, power management, and digital logic systems.Working Principle
The NTD4858NAT4G operates on the principle of metal-oxide-semiconductor (MOS) field-effect transistors (FETs). The device is a four-terminal switch that controls the current flowing through the four terminals. The four terminals are the gate, drain, source and body. The gate terminal is connected to a voltage or current source, which is used to control the current flowing through the device. The source is connected to the output, and the drain is connected to the power supply. The body is connected to the ground, and the device is activated when the voltage at the gate is greater than the voltage at the source. When the voltage at the gate is low, the device is turned off, and no current flows between the drain and the source. When the voltage at the gate is increased, the device turns on, which allows current to flow between the drain and the source. The current that flows between the drain and source is controlled by the amount of voltage applied to the gate terminal. The device offers great flexibility in terms of controlling the current flow, making it well suited for controlling the power output of a system.Conclusion
The NTD4858NAT4G is a four-terminal switch that offers high switching speed and excellent thermal performance. This device is well suited for a variety of user applications including PWM motor control, power supply circuits, battery charge controllers, automotive electronic systems, telecommunication, industrial control systems and digital logic systems. Furthermore, the device operates on the principle of MOSFETs, which allows the user to control the current flow between the drain and source. This offers great flexibility in terms of controlling the power output of a system.The specific data is subject to PDF, and the above content is for reference
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