NTD4858NAT4G Allicdata Electronics
Allicdata Part #:

NTD4858NAT4G-ND

Manufacturer Part#:

NTD4858NAT4G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 25V 11.2A DPAK
More Detail: N-Channel 25V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5...
DataSheet: NTD4858NAT4G datasheetNTD4858NAT4G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1563pF @ 12V
Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Introduction

The NTD4858NAT4G is an N-Channel Enhancement Mode MOSFET. It offers the designer an interesting alternative to the regular 2-terminal MOSFETs. This device is a fully integrated four-terminal switch with a high input impedance and low output terminal resistance. It offers high switching speed and excellent thermal performance while providing superior operational flexibility. It is designed to support high-temperature, high-performance environments.

Features

The NTD4858NAT4G offers several advantages over regular 2-terminal MOSFETs. Here are some of the most important features of this device:
  • High input impedance and low output terminal resistance
  • Low leakage current
  • Low input and output capacitance
  • High switching speed
  • Excellent thermal performance
  • Soft switching capability
  • Compact and lightweight design

Application Fields

The NTD4858NAT4G is well suited for a variety of applications. It is mainly targeted for pulse-width-modulated (PWM) motor control applications. It can be used in consumer power solutions such as power supply circuits, battery charge controllers, automotive electronic systems, telecommunication, and industrial control systems. It can also be used in consumer electronics, power management, and digital logic systems.

Working Principle

The NTD4858NAT4G operates on the principle of metal-oxide-semiconductor (MOS) field-effect transistors (FETs). The device is a four-terminal switch that controls the current flowing through the four terminals. The four terminals are the gate, drain, source and body. The gate terminal is connected to a voltage or current source, which is used to control the current flowing through the device. The source is connected to the output, and the drain is connected to the power supply. The body is connected to the ground, and the device is activated when the voltage at the gate is greater than the voltage at the source. When the voltage at the gate is low, the device is turned off, and no current flows between the drain and the source. When the voltage at the gate is increased, the device turns on, which allows current to flow between the drain and the source. The current that flows between the drain and source is controlled by the amount of voltage applied to the gate terminal. The device offers great flexibility in terms of controlling the current flow, making it well suited for controlling the power output of a system.

Conclusion

The NTD4858NAT4G is a four-terminal switch that offers high switching speed and excellent thermal performance. This device is well suited for a variety of user applications including PWM motor control, power supply circuits, battery charge controllers, automotive electronic systems, telecommunication, industrial control systems and digital logic systems. Furthermore, the device operates on the principle of MOSFETs, which allows the user to control the current flow between the drain and source. This offers great flexibility in terms of controlling the power output of a system.

The specific data is subject to PDF, and the above content is for reference

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